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首页> 外文会议>American Society of Mechanical Engineers(ASME) Integrated Nanosystems Conference: Design, Synthesis, and Applications(NANO 2004); 20040922-24; Pasadena,CA(US) >NANOLITHOGRAPHY USING HIGH TRANSMISSION NANOSCALE RIDGE APERTURES
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NANOLITHOGRAPHY USING HIGH TRANSMISSION NANOSCALE RIDGE APERTURES

机译：使用高透射率纳米尺度脊孔的纳米照相术

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摘要

In this paper, we describe using high transmission nanoscale apertures of C and H shapes for nanolithography applications. We demonstrate that these ridge apertures provide a highly localized and intense light spot that can be used in lithography experiments. Near-field optical lithography comes under the category of scanning probe technologies proposed for overcoming the diffraction limit that is encountered in traditional optical lithography. Some of the near-field techniques involve illuminating a thin resist layer by light emitted either from the tip of a metal coated optical fiber or from regular shaped apertures. The main drawbacks of these approaches are that the process is a serial one and/or the transmission efficiency of the apertures is very low.
机译：在本文中，我们描述了将高透射率的C和H形状的纳米级孔径用于纳米光刻应用。我们证明了这些脊孔提供了高度局部化和强烈的光斑，可用于光刻实验。近场光学光刻技术属于扫描探针技术范畴，该技术旨在克服传统光学光刻技术所遇到的衍射极限。一些近场技术涉及通过从金属涂层光纤的尖端或规则形状的孔发出的光照射薄的抗蚀剂层。这些方法的主要缺点是该过程是串行的，和/或孔的传输效率非常低。

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