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Raman Analysis of the Silicon Wafer Scratched by Single Point Diamond

机译:单点金刚石刻划的硅晶圆的拉曼分析

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This paper presents a Raman analysis of the monocrystalline silicon wafer scratched by single point diamond. Si-Ⅲ and Si-Ⅻ phases are found to be existence in the scratched silicon surface, which is the result of the phase transformation. A mathematical model was developed to calculating the molar concentration of phase of the silicon. Based on the mathemathical model, the relationship between the molar concentrations of the Si-Ⅰ phase and the applied load was analysied.
机译:本文介绍了单点金刚石刮擦的单晶硅晶片的拉曼分析。发现Si-Ⅲ相和Si-Ⅻ相存在于划痕的硅表面中,这是相变的结果。建立了数学模型以计算硅相的摩尔浓度。基于数学模型,分析了Si-Ⅰ相的摩尔浓度与外加载荷之间的关系。

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