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首页> 外文会议>Applied Electromagnetics Conference (AEMC), 2011 IEEE >Studies on the millimeter-wave performance of MITTATs from avalanche transit time phase delay
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Studies on the millimeter-wave performance of MITTATs from avalanche transit time phase delay

机译：雪崩渡越时间相位延迟对MITTAT毫米波性能的研究

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摘要

In this paper the authors have proposed a simple method to study the change in the millimeter-wave performance of IMPATTs operating in MITATT mode from the shift of avalanche transit time (ATT) phase delay. A generalized double iterative computer method based on Gummel-Blue approach incorporating the effect of tunneling is used to obtain admittance characteristics and negative resistivity profiles of silicon based double drift region (DDR) device structures operating at different mm-wave frequencies in the presence of tunneling. It is observed that a shift of ATT phase delay occurs when tunneling is taken into account. This shift is obtained from the spatial variation of the negative resistivity profiles in the depletion layer of the device. The results show that the shift of ATT phase delay increases at higher operating frequencies of the device, which in turn leads to larger degradation of the mm-wave performance of the device at higher frequencies.
机译：在本文中，作者提出了一种简单的方法来研究雪崩渡越时间（ATT）相位延迟的偏移，从而以MITATT模式运行的IMPATT的毫米波性能变化。使用基于隧道效应的基于Gummel-Blue方法的广义双迭代计算机方法来获得在存在隧道的情况下以不同毫米波频率工作的硅基双漂移区（DDR）器件结构的导纳特性和负电阻率分布。观察到，当考虑隧道效应时，ATT相延迟会发生偏移。从器件的耗尽层中负电阻率曲线的空间变化中获得该偏移。结果表明，ATT相位延迟的偏移在更高的设备工作频率下会增加，从而导致更高频率下设备的毫米波性能出现更大的下降。

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