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首页> 外文会议>Asian Pacific Conference on Fracture and Strength;APCFS; 20061122-25;20061122-25; Sanya(CN);Sanya(CN) >Study of Boron-doped Diamond Films by Microwave Plasma CVD Method
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Study of Boron-doped Diamond Films by Microwave Plasma CVD Method

机译：微波等离子体CVD法研究掺硼金刚石薄膜

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Boron-doped diamonds were deposited by microwave plasma chemical vapor deposition (MPCVD) method in order to investigate the influence of inlet boron concentration on the film properties. The substrate material of the specimens was pure titanium (99.9 %). Boron source was introduced into the vacuum chamber by bubbling of B_2O_3, acetone and methanol mixture. Samples were produced with different B_2O_3 concentrations in mixture (1000 ppm, 5000 ppm, and 10000 ppm). The surface morphology of the samples was observed by scanning electron microscope (SEM). X-ray diffraction was used to identify crystal structures of the films. Secondary ion mass spectroscopy was used to examine the qualitative boron contents in the films. For low B_2O_3 concentrations in liquid mixture (1000 ppm), the surface morphology of the film showed both micro crystalline diamond and nano crystalline diamond. For medium B_2O_3 concentrations in liquid mixture (5000 ppm), the surface morphology of the film was also consisted of micro crystalline diamond and nano crystalline diamond. However, the content of micro crystalline diamond decreased in comparison with low B_2O_3 concentration. For high B_2O_3 concentration in liquid mixture (10000 ppm), the surface morphology of the film was almost dominated by nano crystalline diamond. Therefore, the crystal size of boron doped diamond decreased with increasing boron concentration. From these results, it appears that boron will restrain the growth of diamond crystal during deposition.
机译：为了研究硼掺杂对金刚石薄膜性能的影响，采用微波等离子体化学气相沉积（MPCVD）方法沉积了掺硼金刚石。样品的基材是纯钛（99.9％）。通过将B_2O_3，丙酮和甲醇混合物鼓泡将硼源引入真空室。产生的样品具有不同的B_2O_3浓度的混合物（1000 ppm，5000 ppm和10000 ppm）。通过扫描电子显微镜（SEM）观察样品的表面形态。 X射线衍射用于鉴定膜的晶体结构。二次离子质谱法用于检查膜中硼的定性含量。对于液体混合物中的低B_2O_3浓度（1000 ppm），薄膜的表面形态既显示微晶金刚石又显示纳米晶金刚石。对于液体混合物中的B_2O_3中等浓度（5000 ppm），薄膜的表面形态也由微晶金刚石和纳米晶金刚石组成。然而，与低B_2O_3浓度相比，微晶金刚石的含量降低了。对于液体混合物中较高的B_2O_3浓度（10000 ppm），薄膜的表面形态几乎由纳米晶金刚石主导。因此，硼掺杂金刚石的晶体尺寸随着硼浓度的增加而减小。从这些结果看来，硼将在沉积过程中抑制金刚石晶体的生长。

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