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首页> 外文会议>ASME(American Society of Mechanical Engineers) International Mechanical Engineering Congress: Electronic and Photonic Packaging, Electrical Systems and Photonic Design, and Nanotechnology; 20031115-20031121; Washington,DC; US >Metallic Nanowires from Carbon Nanotube Building Blocks: The Effect of Atomic Defects on the Nanotube Influencing Nanowire Growth
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Metallic Nanowires from Carbon Nanotube Building Blocks: The Effect of Atomic Defects on the Nanotube Influencing Nanowire Growth

机译：碳纳米管构件的金属纳米线：原子缺陷对纳米管生长的影响。

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Manipulation and control of matter at the nano- and atomic level are crucial for the success of nano-scale sensors and actuators. The ability to control and synthesize multilayer structures using carbon nanotubes that will enable to build electronic devices within a nanotube is still in its infancy. In this paper, we present results on selective electric field assisted deposition of metals on carbon nanotubes realizing metallic nanowire structures. Silver and platinum nanowires has been fabricated using this approach due to its applications in chemical sensing as catalytic materials to sniff toxic agents and in the area of biomedical nanotechnology for construction of artificial muscles. The electric field assisted technique allows the deposition of metals with high degree of selectivity on carbon nanotubes by manipulating the charges on the surface of the nanotubes. The thickness and the growth of the nanowires was altered by inducing defects on the initial surface of the nanotubes that affected the local current densities and electrochemical reduction of silver and platinum on those defect sites. SEM and TEM investigations revealed silver and platinum nanowires between 10 nm-100 nm in diameter. Relatively higher metal deposition was achieved in defect related sites or places where the nanotubes criss-crossed each other, due to the high current densities in these sites. The present technique is versatile and enables the fabrication of host of different types of metallic and semiconducting nanowires using carbon nanotube templates for nanoelectronics and myriad of sensor applications. Further, nanowires can also serve as model systems for studying quantum size effects in these dimensions.
机译：在纳米级和原子级上对物质的操纵和控制对于纳米级传感器和执行器的成功至关重要。使用碳纳米管控制和合成多层结构的能力仍处于起步阶段，碳纳米管将能够在纳米管内构建电子器件。在本文中，我们介绍了在实现金属纳米线结构的碳纳米管上进行选择性电场辅助金属沉积的结果。由于其在化学传感中作为嗅探有毒物质的催化材料以及在用于建造人造肌肉的生物医学纳米技术领域中的应用，因此使用这种方法制造了银和铂纳米线。电场辅助技术允许通过操纵纳米管表面上的电荷，在碳纳米管上以高选择性地沉积金属。通过在纳米管的初始表面上诱导缺陷来改变纳米线的厚度和生长，所述缺陷影响局部电流密度以及在那些缺陷部位上银和铂的电化学还原。 SEM和TEM研究表明，银和铂纳米线的直径在10 nm至100 nm之间。由于缺陷相关的位置或纳米管相互交叉的位置，由于这些位置的电流密度较高，因此可以实现相对较高的金属沉积。本技术是通用的，并且能够使用用于纳米电子学和无数传感器应用的碳纳米管模板来制造不同类型的金属和半导体纳米线的主体。此外，纳米线还可以用作模型系统，以研究这些尺寸中的量子尺寸效应。

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