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In-Situ Studies on 2D Materials

机译:二维材料的原位研究

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摘要

The investigation of 2D materials such as graphene and transition metal dichalcogenides for beyond CMOS device concepts emphasizes the importance of surface and interfacial reactions. A fundamental understanding of such reactions in the context of materials integration for devices greatly benefits from in situ characterization methods where processes such as surface cleaning, film deposition, and annealing can be simulated and subsequently correlated to device behavior. This paper summarizes our recent work on in-situ characterization of 2D materials in the context of device applications and the correlation of the physical and electrical characterization.
机译:对超出CMOS器件概念的2D材料(例如石墨烯和过渡金属二卤化氢)的研究强调了表面和界面反应的重要性。在设备材料集成的背景下,对此类反应的基本理解将极大地受益于原位表征方法,该方法可模拟诸如表面清洁,膜沉积和退火等过程,随后将其与器件行为相关联。本文总结了我们最近在器件应用以及物理和电学表征的相关性方面对2D材料进行原位表征的工作。

著录项

  • 来源
  • 会议地点 Cancun(MX)
  • 作者

    R.M.Wallace;

  • 作者单位

    Department of Materials Science and Engineering, The University of Texas at Dallas,Richardson, Texas 75080, USA;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
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