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首页> 外文会议>Nanophotonics Australasia 2017 >Investigation of the influence of the proximity effect and randomness on a photolithographically fabricated photonic crystal nanobeam cavity
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Investigation of the influence of the proximity effect and randomness on a photolithographically fabricated photonic crystal nanobeam cavity

机译：邻近效应和随机性对光刻制造的光子晶体纳米束腔的影响的研究

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摘要

Recent progress on the fabrication techniques used in silicon photonics foundries has enabled us to fabricate photonic crystal (PhC) nanocavities using a complementary metal-oxide-semiconductor (CMOS) compatible process. A high Q two-dimensional PhC nanocavity and a one-dimensional nanobeam PhC cavity with a Q exceeding 100 thousand have been fabricated using ArF excimer laser immersion lithography. These are important steps toward the fusion of silicon photonics devices and PhC devices. Although the fabrication must be reproducible for industrial applications, the properties of PhC nanocavities are sensitively affected by the proximity effect and randomness. In this study, we quantitatively investigated the influence of the proximity effect and randomness on a silicon nanobeam PhC cavity. First, we discussed the optical properties of cavities defined with one- and two-step exposure methods, which revealed the necessity of a multi-stage exposure process for our structure. Then, we investigated the impact of block structures placed next to the cavities. The presence of the blocks modified the resonant wavelength of the cavities by about 10 nm. The highest Q we obtained was over 100 thousand. We also discussed the influence of photomask misalignment, which is also a possible cause of disorders in the photolithographic fabrication process. This study will provide useful information for fabricating integrated photonic circuits with PhC nanocavities using a photolithographic process.
机译：硅光子铸造厂中使用的制造技术的最新进展使我们能够使用互补金属氧化物半导体（CMOS）兼容工艺来制造光子晶体（PhC）纳米腔。使用ArF准分子激光浸没光刻技术已经制造了高Q二维PhC纳米腔和Q超过10万的一维纳米束PhC腔。这些是硅光子器件和PhC器件融合的重要步骤。尽管制造必须可重复用于工业应用，但是PhC纳米腔体的特性会受到邻近效应和随机性的敏感影响。在这项研究中，我们定量研究了邻近效应和随机性对硅纳米束PhC腔的影响。首先，我们讨论了用一步和两步曝光方法定义的腔体的光学特性，这揭示了对我们的结构进行多阶段曝光过程的必要性。然后，我们研究了放置在空腔旁的块结构的影响。块的存在将空腔的共振波长改变了约10nm。我们获得的最高Q值超过10万。我们还讨论了光掩模未对准的影响，这也是光刻制造过程中出现失调的可能原因。这项研究将为使用光刻工艺制造具有PhC纳米腔的集成光子电路提供有用的信息。

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  • 来源
    《Nanophotonics Australasia 2017》|2017年|104561Y.1-104561Y.7|共7页
  • 会议地点 Melbourne(AU)
  • 作者

    Tomohiro Tetsumoto; Hajime Kumazaki; Rammaru Ishida; Takasumi Tanabe;

  • 作者单位

    Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1, Hiyoshi-, Kohoku-ku, Yokohama 223-8522, Japan;

    Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1, Hiyoshi-, Kohoku-ku, Yokohama 223-8522, Japan;

    Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1, Hiyoshi-, Kohoku-ku, Yokohama 223-8522, Japan;

    Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1, Hiyoshi-, Kohoku-ku, Yokohama 223-8522, Japan;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Photonic crystal; optical nanocavities; silicon photonics; CMOS process; photolithography;

    机译：光子晶体；光学纳米腔；硅光子学CMOS工艺；光刻;

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