Pool-Frenkel emission and hopping conduction in semiconducting carbon nanotube transistor

机译：半导体碳纳米管晶体管的池-弗仑克尔发射和跳跃传导

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The effect of using EBL with devices incorporating CNT has also been investigated. The effect on metallic and semiconducting CNT exposure in the channel of the transistor devices was examined and a physical mechanism for the variations discussed. We show that the subsequent generation of trap states along the CNT channel varies the conduction mechanism of the nanotube and has a significant effect on device performance. Metallic and semiconducting CNT react very differently, with an apparent increased localization effect in the metallic tubes responsible for dramatic decreases in conductance.

机译：还研究了将EBL与包含CNT的设备一起使用的效果。研究了对晶体管器件沟道中金属和半导体CNT暴露的影响，并讨论了变化的物理机制。我们表明，沿CNT通道的陷阱状态的后续生成会改变纳米管的传导机制，并会对器件性能产生重大影响。金属和半导体CNT的反应非常不同，在金属管中明显增加的局部化作用导致电导率急剧下降。

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来源
《Carbon nanotubes, graphene, and associated devices II》|2009年|739907.1-739907.6|共6页
会议地点 San Diego CA(US)
作者
David Perello; Woojong Yu; Dong Jae Bae; Seung Jin Chae; Moon J Kim; Young Hee Lee; Minhee Yun;
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作者单位

Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA 15260, USA;

Center Nanotubes and Nanostructured Composites, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, ROK;

Center Nanotubes and Nanostructured Composites, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, ROK;

Center Nanotubes and Nanostructured Composites, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, ROK;

Department of Electrical Engineering, University of Texas Dallas, Richardson, TX 75205, USA;

Center Nanotubes and Nanostructured Composites, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, ROK;

Department of Electrical and Comp;

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原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词
carbon nanotubes; electron beam lithography; electron irradiation; field effect transistor;

机译：碳纳米管；电子束光刻；电子辐照场效应晶体管;

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专利

1. Analysis of hopping conduction in semiconducting and metallic carbon nanotube devices [J] . David J. Perello, Woo Jong Yu, Dong Jae Bae, Journal of Applied Physics . 2009,第12期

机译：半导体和金属碳纳米管器件中的跳跃传导分析
2. One-step grown suspended n-type semiconducting single wall carbon nanotube field effect transistors with carbon nanotube electrodes [J] . Yun-Hi Lee, Jong-Hee Lee, Ji-Young Noh Applied Physics Letters . 2008,第4期

机译：具有碳纳米管电极的一步生长悬浮n型半导体单壁碳纳米管场效应晶体管
3. Novel Method of Converting Metallic-Type Carbon Nanotubes to Semiconducting-Type Carbon Nanotube Field-Effect Transistors [J] . Bae-Horng Chen, Jeng-Hua Wei, Po-Yuan Lo, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第4B期

机译：将金属型碳纳米管转换为半导体型碳纳米管场效应晶体管的新方法
4. Pool-Frenkel emission and hopping conduction in semiconducting carbon nanotube transistor [C] . Conference on carbon nanotubes, graphene, and associated devices II . 2009

机译：半导体碳纳米管晶体管中的泳池 - Frenkel发射和跳跃传导
5. A study of junction effect transistors and their roles in carbon nanotube field emission cathodes in compact pulsed power applications. [D] . Shui, Qiong. 2007

机译：结效应晶体管及其在紧凑型脉冲功率应用中在碳纳米管场发射阴极中的作用的研究。
6. Capacitance-Voltage Characteristics of Thin-film Transistors Fabricated with Solution-Processed Semiconducting Carbon Nanotube Networks [O] . Le Cai, Suoming Zhang, Jinshui Miao, 2015

机译：溶液处理半导体碳纳米管网络制造的薄膜晶体管的电容-电压特性
7. High Performance Semiconducting Enriched Carbon Nanotube Thin Film Transistors Using Metallic Carbon Nanotube Electrode [O] . Sarker, Biddut K., Kang, Narae, Khondaker, Saiful I. 2013

机译：高性能半导体富集碳纳米管薄膜晶体管使用金属碳纳米管电极
8. Electrical Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field-Effect Transistors. [R] . Bushmaker, A. W. 2013

机译：半导体碳纳米管场效应晶体管中的电输运和沟道长度调制。

Pool-Frenkel emission and hopping conduction in semiconducting carbon nanotube transistor

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