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Stabilizing a Pulsed Field Emission from an Array of Carbon Nanotubes

机译：稳定碳纳米管阵列的脉冲场发射

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In this paper, we propose a new design configuration for a carbon nanotube (CNT) array based pulsed field emission device to stabilize the field emission current. In the new design, we consider a pointed height distribution of the carbon nanotube array under a diode configuration with two side gates maintained at a negative potential to obtain a highly intense beam of electrons localized at the center of the array. The randomly oriented CNTs are assumed to be grown on a metallic substrate in the form of a thin film. A model of field emission from an array of CNTs under diode configuration was proposed and validated by experiments. Despite high output, the current in such a thin film device often decays drastically. The present paper is focused on understanding this problem. The random orientation of the CNTs and the electromechanical interaction are modeled to explain the self-assembly. The degraded state of the CNTs and the electromechanical force are employed to update the orientation of the CNTs. Pulsed field emission current at the device scale is finally obtained by using the Fowler-Nordheim equation by considering a dynamic electric field across the cathode and the anode and integration of current densities over the computational cell surfaces on the anode side. Furthermore we compare the subsequent performance of the pointed array with the conventionally used random and uniform arrays and show that the proposed design outperforms the conventional designs by several orders of magnitude. Based on the developed model, numerical simulations aimed at understanding the effects of various geometric parameters and their statistical features on the device current history are reported.
机译：在本文中，我们提出了一种基于碳纳米管（CNT）的脉冲场发射器件的新设计配置，以稳定场发射电流。在新设计中，我们考虑了在二极管配置下碳纳米管阵列的尖峰高度分布，其中两个侧门保持在负电位，以获得位于阵列中心的高强度电子束。假定随机取向的CNT以薄膜形式生长在金属基底上。提出了二极管配置下的碳纳米管阵列的场发射模型，并通过实验进行了验证。尽管输出很高，但这种薄膜器件中的电流通常会急剧衰减。本文的重点是了解这个问题。碳纳米管的随机取向和机电相互作用被建模以解释自组装。 CNT的降解状态和机电力被用于更新CNT的取向。通过考虑阴极和阳极两端的动态电场以及阳极侧计算单元表面上的电流密度的积分，最终使用Fowler-Nordheim方程获得了器件级的脉冲场发射电流。此外，我们将尖头阵列与常规使用的随机阵列和均匀阵列的后续性能进行了比较，结果表明，所提出的设计比常规设计的性能高出几个数量级。基于已开发的模型，报告了旨在了解各种几何参数及其统计特征对器件电流历史的影响的数值模拟。

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