U.S. Naval Research Laboratory, Electronic Science and Technology Division,rn4555 Overlook Ave S.W. Washington, DC 20375;
U.S. Naval Research Laboratory, Electronic Science and Technology Division,rn4555 Overlook Ave S.W. Washington, DC 20375;
U.S. Naval Research Laboratory, Electronic Science and Technology Division,rn4555 Overlook Ave S.W. Washington, DC 20375;
U.S. Naval Research Laboratory, Electronic Science and Technology Division,rn4555 Overlook Ave S.W. Washington, DC 20375;
U.S. Naval Research Laboratory, Electronic Science and Technology Division,rn4555 Overlook Ave S.W. Washington, DC 20375;
et al;
epitaxial graphene; dry transfer; silicon carbide; Raman; XPS; Hall effect;
机译:SiC上外延石墨烯的拉曼光谱和转移到SiO2上的外延石墨烯的拉曼光谱
机译:将外延石墨烯干转移到任意衬底上的技术
机译:SiC(0001)上外延石墨烯的结构和电子性质:生长,表征,转移掺杂和氢嵌入的综述
机译:外延石墨烯:干转移和材料表征
机译:2-D电子材料:6h-碳化硅上石墨烯的外延生长(0001)
机译:外延石墨烯中电荷转移产生的巨型量子霍尔平台
机译:外延石墨烯在siC和外延石墨烯上的拉曼光谱 转移到siO2