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Epitaxial Graphene: Dry Transfer and Materials Characterization

机译:外延石墨烯:干转移和材料表征

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Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit higher carrier mobilities in comparison graphene grown via most other methods, while also remaining amenable to wafer-scale growth and fabrication. The ability to transfer large area (>mm2), continuous graphene films to arbitrary substrates while maintaining the electrical and structural integrity of the film is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO_2, GaN and Al_2O_3 substrates using thermal release tape both with and without a PMMA backing layer. Van der Pauw devices fabricated from C-face EG that were transferred to SiO_2 and sapphire exhibited similar Hall effect mobilities, with an approximate three-fold reduction in carrier density when compared to devices fabricated on as-grown material. Raman spectroscopy illustrated that the optimized transfer process did not adversely affect the material quality, while XPS was used to both determine the transfer efficiency as well as to observe the presence of atomic silicon within the as-grown EG films. This latter observation may provide insight into the identity of the native dopant within these materials and/or a point defect that could be limiting carrier mobility.
机译:与通过大多数其他方法生长的石墨烯相比,生长在SiC碳表面上的外延石墨烯(EG)已显示出更高的载流子迁移率,同时还适合晶圆级生长和制造。希望能够将大面积(> mm2)的连续石墨烯薄膜转移到任意基材上,同时保持薄膜的电气和结构完整性。我们展示了使用带有和不带有PMMA背衬层的热剥离带将EG从4H-SiC的C面干转移到SiO_2,GaN和Al_2O_3衬底上。由C面EG制成的Van der Pauw器件已转移到SiO_2和蓝宝石上,表现出相似的霍尔效应迁移率,与由生长材料制成的器件相比,载流子密度大约降低了三倍。拉曼光谱表明,优化的转移过程不会对材料质量产生不利影响,而XPS既可用于确定转移效率,也可用于观察生长的EG膜中原子硅的存在。后一观察可提供对这些材料中天然掺杂剂的身份和/或可能限制载流子迁移率的点缺陷的见解。

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