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Scanning Raman spectroscopy of nanostructured graphene: doping due to presence of edges

机译：纳米结构石墨烯的扫描拉曼光谱：由于存在边缘而掺杂

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摘要

We report about scanning Raman experiments on, both, as deposited and nano-structured graphene flakes. The Raman scans allow us to extract spatially resolved information about frequencies, intensities and linewidths of the observed phonon modes. In nano-structured single-layer flakes, where periodic arrays of holes (antidots) were fabricated by electron-beam lithography and subsequent etching, we find a systematic dependence of the phonon frequencies, intensities and linewidths on the periods and hole sizes of the nano-pattemed regions. A systematic shift of the G mode frequency evidences a doping effect in the nano-patterned regions. In order to calibrate the doping dependence of the G mode phonon frequency, we have investigated the position and linewidth of this mode in a gated single-layer flake. With this calibration, we can quantitatively determine the doping level, which is introduced via preparation of the periodic hole arrays into the samples. A comparison of G and 2D mode frequencies allows us to identify the doping to be of p-type.
机译：我们报道了有关沉积和纳米结构石墨烯薄片的扫描拉曼实验。拉曼扫描使我们能够提取关于观察到的声子模式的频率，强度和线宽的空间分辨信息。在纳米结构的单层薄片中，通过电子束光刻和随后的蚀刻制造了周期性的孔（解毒剂）阵列，我们发现声子频率，强度和线宽与纳米周期和孔尺寸的系统相关性图案的区域。 G模式频率的系统偏移证明了在纳米图案区域中的掺杂效应。为了校准G模式声子频率的掺杂依赖性，我们研究了该模式在门控单层薄片中的位置和线宽。通过这种校准，我们可以定量确定掺杂水平，这是通过将周期孔阵列制备成样品而引入的。通过比较G模式和2D模式频率，我们可以识别出p型掺杂。

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