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TEMPERATURE DEPENDENCE OF CURRENT CARRIER’S SPIN RELAXATION IN GRAPHITE

机译：石墨中载流子自旋弛豫的温度依赖性

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来源
《Carbon '01》|2001年|p.1-5|共5页
会议地点 Lexington KY(US);Lexington KY(US)
作者
A.M. Ziatdinov; V.V. Kainara;
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作者单位

Institute of Chemistry, Far Eastern Branch of the Russian Academy of Sciences159, Prosp. 100-letiya, 690022 Vladivostok, Russia;

Institute of Chemistry, Far Eastern Branch of the Russian Academy of Sciences159, Prosp. 100-letiya, 690022 Vladivostok, Russia;

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会议组织
原文格式 PDF
正文语种 eng
中图分类第Ⅳ族非金属元素（碳和硅）及其化合物;
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1. Temperature dependence of carrier spin polarization determined from current-induced domain wall motion in a Co/Ni nanowire [J] . Ueda K. Applied Physics Letters . 2012,第20期

机译：由Co / Ni纳米线中电流诱导的畴壁运动确定的载流子自旋极化的温度依赖性
2. Temperature dependence of carrier spin polarization determined from current-induced domain wall motion in a Co/Ni nanowire [J] . K. Ueda, T. Koyama, Ft. Hiramatsu, Applied Physics Letters . 2012,第20期

机译：由Co / Ni纳米线中电流诱导的畴壁运动确定的载流子自旋极化的温度依赖性
3. Toward ~(19)F magnetic resonance thermometry: spin-lattice and spin-spin-relaxation times and temperature dependence of fluorinated drugs at 9.4 T [J] . Christian Prinz, Paula Ramos Delgado, Thomas Wilhelm Eigentler, Magma: Magnetic resonance materials in physics, biology, and medicine . 2019,第1期

机译：朝〜（19）F磁共振测温：旋转晶格和旋转旋转弛豫时间和氟化药物温度依赖于9.4 T.
4. SURFACE SPIN RELAXATION OF CURRENT CARRIERS IN GRAPHITE AS A REASON FOR LOW TEMPERATURE PEAK FORMATION IN TEMPERATURE DEPENDENCE OF CONDUCTION ESR LENEWIDTH [C] . A.M. Ziatdinov, V.V. Kainara EUROCARBON 2000 . 2000

机译：石墨中电流载体的表面自旋弛豫是导电峰浓度随温度变化的低温峰形成的原因
5. Fabrication and characterization of single and few layer graphene spin valves leading to optimization of spin relaxation length as well as spin voltage dependence on carrier concentration. [D] . Kubo, Yuri J. 2015

机译：单层和少层石墨烯自旋阀的制造和表征导致自旋弛豫长度以及自旋电压对载流子浓度的依赖性得到优化。
6. Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well [O] . Lifen Han, Yonggang Zhu, Xinhui Zhang, 2011

机译：GaAs / AlGaAs量子阱中自旋弛豫的温度和电子密度依赖性
7. Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors [O] . Kathy Kyaw Min 2018

机译：用于III-V半导体载体松弛的激发和温度依赖性的光致发光和寿命测量
8. Using Time-Resolved Photoluminescence to Measure the Excitation and Temperature Dependence of Carrier Relaxation in Mid-Wave Infrared Semiconductors [R] . Cumblidge, K. 2004

机译：利用时间分辨光致发光测量中波红外半导体中载流子弛豫的激发和温度依赖性

TEMPERATURE DEPENDENCE OF CURRENT CARRIER’S SPIN RELAXATION IN GRAPHITE

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