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首页> 外文会议>Vertical-Cavity Surface-Emitting Lasers XXIII >Optically Pumped Vertical-Cavity Surface-Emitting Lasers at 375 nm with Air-Gap/Al_(0.05)Ga_(0.95)N Distributed Bragg Reflectors
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Optically Pumped Vertical-Cavity Surface-Emitting Lasers at 375 nm with Air-Gap/Al_(0.05)Ga_(0.95)N Distributed Bragg Reflectors

机译：气隙/Al_(0.05)Ga_(0.95)N分布式布拉格反射镜在375 nm处的光泵浦垂直腔表面发射激光器

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摘要

Optically pumped VCSELs with a 1λ thick optical cavity lasing at 375 nm have been demonstrated using a pulsed 248nm KrF excimer laser source. To realize a high-reflectivity mirror on the bottom of the cavity, five-period airgap/Al_(0.05)Ga_(0.95)N DBRs with a large refractive index contrast have been employed while the top mirror was formed bydielectric DBRs consisting of twelve pairs HfO_2/SiO_2. The lowest threshold incident power density measured at roomtemperaturewas estimated to be ～270 kW/cm~2. The achieved optically pumped VCSEL demonstrates the possibility thatthe airgap/Al_xGa_(1-x)N DBRs can be used as a mirror for injection laser devices.
机译：已经使用脉冲248 \ r \ nnm KrF准分子激光源演示了在375 nm处具有1λ厚光腔激光的光泵浦VCSEL。为了在腔体的底部实现高反射率镜，已采用具有较大折射率对比度的五周期气隙/r\nAl_(0.05)Ga_(0.95)N DBR，而顶部镜由\ r形成介电DBR由十二对HfO_2 / SiO_2组成。在室温\ r \ n下测得的最低阈值入射功率密度估计为〜270 kW / cm〜2。所获得的光泵浦VCSEL证明了气隙/ Al_xGa_（1-x）N DBR可用作注入激光设备的反射镜的可能性。

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  • 来源
    《Vertical-Cavity Surface-Emitting Lasers XXIII》|2019年|109380A.1-109380A.7|共7页
  • 会议地点 0277-786X;1996-756X
  • 作者

    Young Jae Park; Theeradetch Detchprohm; Karan Mehta; Jialin Wang; Hoon Jeong; Yuh-Shiuan Liu; Ping Chen; Shuo Wang; Shyh-Chiang Shen; P. Douglas Yoder; Fernando Ponce; Russell D. Dupuis;

  • 作者单位

    Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA;

    Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA tdetchprohm@gatech.edu phone 1 404 385-2403;

    Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA;

    Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA;

    Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA;

    Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA;

    Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA;

    Dept. of Physics and Astronomy, Arizona State University, Tempe AZ 85287;

    Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA;

    Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA;

    Dept. of Physics and Astronomy, Arizona State University, Tempe AZ 85287;

    Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA;

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