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首页> 外文会议>Ceramic materials for energy applications II >PROCESSING OF ULTRAFINE BETA-SILICON CARBIDE POWDER BY SILICON-CARBON REACTION
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PROCESSING OF ULTRAFINE BETA-SILICON CARBIDE POWDER BY SILICON-CARBON REACTION

机译：硅碳反应法处理超细贝塔碳化硅粉

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Silicon Carbide (SiC) finds applications as a structural ceramic in high temperature nuclear reactors and processing of the components for such applications require sinter-active silicon carbide powders. Synthesis of powders by Silicon, Carbon has been studied. Phase pure powder formation was found to occur in the temperature range of 1673 to 1823K as shown by Differential thermal analysis and X Ray Diffraction studies. The Silicon Carbide powders formed were agglomerated (Mean particle size ～10microns) with faceted dense particles. The dispersion conditions for effective wet grinding were optimized through zeta-potential and rheological studies. A pH of ～8 was found to be optimum for dispersion (Zeta potential ～ -30mV) and the slurry with a solid loading of 1 g/cc (i.e., shear rate independent Newtonian flow). After de-agglomeration for 4 hours in a planetary mill, powders with a mean particle size of ～2microns free of agglomerates with size greater than 10 microns formed. These powders were incorporated with Yttria-Alumina and Aluminium-Boron-Carbon additives and subjected to hot pressing at 2223K under the pressure of 50MPa in protective atmosphere. The sintered bodies upon characterization were alpha modification with a density greater than 96%T.D. exhibiting faceted/lath like microstructure.
机译：碳化硅（SiC）可以在高温核反应堆中用作结构陶瓷，而用于此类应用的组件的加工则需要烧结活性碳化硅粉末。已经研究了通过硅，碳合成粉末。经差示热分析和X射线衍射研究表明，在1673至1823K的温度范围内发生了相纯粉末的形成。将形成的碳化硅粉末团聚（平均粒径约10微米），上面刻有致密的颗粒。通过ζ电势和流变学研究优化了有效湿磨的分散条件。发现分散液（Zeta电位约为-30mV）和固含量为1 g / cc（即独立于牛顿剪切速率的剪切速率）的浆液的最适pH值为〜8。在行星式磨机中解聚4小时后，形成的平均粒径约为2微米的粉末中没有团聚体，其粒径大于10微米。将这些粉末与氧化钇-氧化铝和铝-硼-碳添加剂混合，并在保护气氛下于2223K和50MPa的压力下进行热压。表征后的烧结体为α改性，密度大于96％T.D。表现出类似刻面/条状的微观结构。

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  • 会议地点 Daytona Beach FL(US);Daytona Beach FL(US);Daytona Beach FL(US);Daytona Beach FL(US);Daytona Beach FL(US);Daytona Beach FL(US)
  • 作者

    S. Sonak; S. Ramanathan; A. K. Suri;

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    Materials Group Bhabha Atomic Research Centre, Mumbai, 400085, India;

    Materials Group Bhabha Atomic Research Centre, Mumbai, 400085, India;

    Materials Group Bhabha Atomic Research Centre, Mumbai, 400085, India;

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