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Characterization of a 4Kx2K three side buttable CCD

机译：4Kx2K三侧对接式CCD的特性

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Abstract: Results are presented on the fabrication and characterization of a 4 K $MUL 2 K three-side buttable CCD produced by Orbit Semiconductor. This first run of wafers was produced to test the ability of Orbit to produce high-quality scientific CCDs with the characteristics required for detectors to be used in optical instruments of the Keck Observatory. Also on the wafer are two 2 K $MUL 2 K devices. Similar devices have been fabricated for us previously by Loral/Fairchild. Extensive characterization of the Loral devices has taken place over the past few years, so interest is high about the possibility that Orbit might become a second source for similar detectors. This paper presents the first results on the 4 K $MUL 2 K CCDs, including measurements of charge transfer efficiency, low-temperature dark current, on-chip amplifier readout noise, localized charge traps, full well, and responsive quantum efficiency. !1
机译：摘要：本文介绍了由Orbit Semiconductor生产的4 K $ MUL 2 K三面可拉伸CCD的制造和表征。生产了第一批晶圆，以测试Orbit生产高质量科学CCD的能力，该特性具有在凯克天文台的光学仪器中使用的探测器所需的特性。晶片上还有两个2 K $ MUL 2 K器件。 Loral / Fairchild之前为我们制造了类似的设备。在过去的几年中，已经对Loral设备进行了广泛的表征，因此人们对Orbit可能成为类似探测器的第二个来源的可能性非常感兴趣。本文介绍了在4 K $ MUL 2 K CCD上的第一个结果，包括电荷转移效率，低温暗电流，片上放大器读出噪声，局部电荷陷阱，满阱和响应量子效率的测量结果。 ！1

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