• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Chemical mechanical polishing 12 >Electrochemical Characterizations and CMP Performance of Ru Slurry
【24h】

Electrochemical Characterizations and CMP Performance of Ru Slurry

机译：钌浆料的电化学表征及CMP性能

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Currently, the manufacture of integrated circuits and fabrication of electronic devices requires the use of various types of chemical mechanical polishing compositions to selectively remove different metal, barrier, dielectric, low-k, ultra-low-k and other films at desirable rates to achieve the global planarization goal on the surfaces of patterned wafers. For more advanced node processing and applications, the copper metal lines are getting thinner and narrower, which leads to increased resistivity and causes electrical signal loss in the interconnection lines of the fabricated electronic devices. Therefore, new barrier layer materials other than Ta, TaN, Ti and TiN have been introduced in order to reduce the electrical signal loss beyond 20nm node applications. Ruthenium (Ru) has been used and tested as one of the new promising barrier layer materials. The introduction of Ru as a new barrier layer further complicates electrochemical and chemical reactions involved in a barrier chemical mechanical planarization process. Our studies focused on discovering the effects of key chemical components used in the CMP polishing compositions for polishing copper/ruthenium films and the effects of such polishing compositions on corrosion current, open circuit potential, galvanic corrosion and AC impedance on both ruthenium and copper films. The chemical mechanical polish results are reported together with these electrochemical studies. Using electrochemical studies, the effects of corrosion inhibitors on galvanic corrosion behavior at the Cu/Ru interface enables a more effective selection of suitable corrosion inhibitors for polishing Cu/Ru films.
机译：当前，集成电路的制造和电子设备的制造要求使用各种类型的化学机械抛光组合物以期望的速率选择性地去除不同的金属，势垒，电介质，低k，超低k和其他膜，以实现图案化晶圆表面的整体平面化目标。对于更高级的节点处理和应用，铜金属线越来越细，这导致电阻率增加，并在制造的电子设备的互连线中引起电信号损失。因此，为了减少超过20nm节点应用的电信号损耗，已经引入了Ta，TaN，Ti和TiN以外的新型势垒层材料。钌（Ru）已被用作新的有前景的阻挡层材料之一，并经过测试。 Ru作为新的阻挡层的引入进一步使在阻挡化学机械平面化工艺中涉及的电化学和化学反应变得复杂。我们的研究着重于发现用于抛光铜/钌膜的CMP抛光剂中使用的关键化学成分的影响，以及此类抛光剂对钌和铜膜上的腐蚀电流，开路电势，电腐蚀和AC阻抗的影响。化学机械抛光的结果与这些电化学研究一起被报道。通过电化学研究，缓蚀剂对Cu / Ru界面电偶腐蚀行为的影响使得能够更有效地选择合适的缓蚀剂来抛光Cu / Ru膜。

著录项

  • 来源
  • 会议地点 Honolulu HI(US)
  • 作者

    Tom Shi; James Henry; James Schlueter;

  • 作者单位

    DA NanoMaterials, an Air Products Company 8555 South River Parkway, Tempe, AZ 85284, USA;

    DA NanoMaterials, an Air Products Company 8555 South River Parkway, Tempe, AZ 85284, USA;

    DA NanoMaterials, an Air Products Company 8555 South River Parkway, Tempe, AZ 85284, USA;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号