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A Modeling Study on the Layout Impact of with-in-die Thickness Range for STI CMP

机译：裸片厚度范围对STI CMP布局影响的建模研究

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摘要

Chemical Mechanical Planarization process has a proven track record as an effective method for planarizing the wafer surface at multiple points of the semiconductor manufacturing flow. One of the most challenging aspects of the CMP process, particularly in applications like Shallow Trench Isolation (STI), is the difference in relative removal rates of the different materials that are being polished. A certain amount of over-polish is required to clear oxide on top of the nitride, however, this over-polish may also lead to significant problems like dishing and erosion (introducing additional topography after the film has been planarized). This work formulates a methodology to predict how this additional topography is modulated by incoming layout properties introducing a parameter to accurately characterize line and space width on a layout with random geometric shapes.
机译：化学机械平面化工艺具有行之有效的记录，是一种在半导体制造流程的多个点上平面化晶片表面的有效方法。 CMP工艺最具挑战性的方面之一，特别是在诸如浅沟槽隔离（STI）之类的应用中，是被抛光的不同材料的相对去除速率的差异。需要一定量的过度抛光以清除氮化物顶部的氧化物，但是，这种过度抛光也可能导致严重的问题，例如凹陷和腐蚀（在将膜平面化后引入额外的形貌）。这项工作制定了一种方法，可预测传入的布局属性如何通过引入参数来精确表征具有随机几何形状的布局上的线和间隔宽度，从而如何调制此附加地形。

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  • 会议地点 Honolulu HI(US)
  • 作者

    S. Kincal; G.B. Basim;

  • 作者单位

    Department of Chemical Engineering, Middle East Technical University, Ankara 06800, Turkey;

    Department of Mechanical Engineering, Ozyegin University, Istanbul 34794, Turkey;

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  • 正文语种 eng
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