Displacement damage dose approach to analyze ion irradiation effects on homemade GaAs/Ge solar cells

著录项

• 来源
  《Chinese Physics C》|2008年|243-246|共4页
• 会议地点 Lanzhou and Jiayuguan(CN)
• 作者

  S.A.Hosseini; rnG.A Abarsaji; rnM.Mesdaghi;

  展开▼
• 作者单位

  LIU Yun-Hong(刘运宏)@Key Laboratory of Beam Technology and Materials Modification of Ministry of Education,Beijing Normal University,Beijing 100875,China;

  Institute of Low Energy Nuclear Physics,Beijing Normal University,Beijing 100875,China--WANG Rong(王荣)@Key Laboratory of Beam Technology and Materials Modification of Ministry of Education,Beijing Normal University,Beijing 100875,China;

  Institute of Low Energy Nuclear Physics,Beijing Normal University,Beijing 100875,China;

  Beijing Radiation Center,Beijing 10--CUI Xin-Yu(崔新宇)@Tianjin Institute of Power Sources,Tianjin 300381,China--SUN Xu-Fang(孙旭芳)@Key Laboratory of Beam Technology and Materials Modification of Ministry of Education,Beijing Normal University,Beijing 100875,China;

  Institute of Low Energy Nuclear Physics,Beijing Normal University,B;

  展开▼
• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 物理学;
• 关键词

  GaAs/Ge solar cells; displacement damage dose; carbon ion; proton; irradiation;

  机译：GaAs / Ge太阳能电池；位移损伤剂量；碳离子；质子；辐照;