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首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Feasibility studies of coating method for planarization process
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Feasibility studies of coating method for planarization process

机译：平面化工艺中涂层方法的可行性研究

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The lithography process on topographic substrate is one of the most critical issues for device manufacturing. Topographic substrate-induced focus variation occurs between top position and bottom position in a layer. That is, common depth of focus is reduced. This focus variation is sure to ruin the focus budget in low kl1lithography. From the focus budget of CMOS device , substrate topography is required to be less than 30nm for hp 45-nm generation devices and less than 15nm for hp 32-nm generation devices. In this paper, the authors evaluate a novel concept for hp45-nm generation dual damascene layer for global surface planarization. The novel concept is thin planarization layer with bottom anti-reflecting (BAR) function. This planarization layer with optical performance is materialized by UV crosslink materials and process. This concept is expected to lead to a simpler planarization process. Thin planarization layer with BAR function clear BARC layer and simplifies the etching process. Our study showed that the planarization performance of UV crosslink layer with 100nm thickness was 20nm thickness bias between the field area and dense via hole area. This thickness bias achieved the requirement of hp 45nm generation. Furthermore, fine resist pattern was resolved on the planarization layer by the optimization of acid components and additive.
机译：地形衬底上的光刻工艺是器件制造中最关键的问题之一。地形衬底引起的焦点变化发生在层的顶部位置和底部位置之间。即，减少了共同的焦点深度。这种焦点变化肯定会破坏低kl1光刻中的焦点预算。从CMOS器件的预算中，对于hp 45-nm世代设备，基板外形要求小于30nm，对于hp 32-nm世代设备，基板外形要求小于15nm。在本文中，作者评估了用于整体表面平面化的hp45-nm代双镶嵌层的新概念。新概念是具有底部防反射（BAR）功能的薄型平面化层。具有光学性能的该平坦化层通过UV交联材料和工艺来实现。预期该概念将导致更简单的平坦化工艺。具有BAR功能的薄型平面化层使BARC层清晰可见，并简化了蚀刻工艺。我们的研究表明，具有100nm厚度的UV交联层的平面化性能是在场面积和致密通孔面积之间存在20nm的厚度偏差。这种厚度偏差满足了hp 45nm世代的要求。此外，通过优化酸成分和添加剂，在平面化层上分辨出了精细的抗蚀剂图案。

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