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首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Calibration of Physical Resist Models: Methods, Usability, and Predictive Power
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Calibration of Physical Resist Models: Methods, Usability, and Predictive Power

机译：物理抵抗模型的校准：方法，可用性和预测能力

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摘要

We discuss the methodology of resist model calibration under various aspects and assess the resulting predictive accuracy. The study is performed on an extensive OPC data set which includes several thousands of CD values obtained with immersion lithography for the 45 nm technology node. We address practical aspects such as speed of calibration vs. size of calibration data set and the role of pattern selection for calibration. In particular, we show that a small subset of the data set is sufficient to provide accurate calibration results. However, the overall predictive power can strongly be enhanced if a few critical patterns are additionally included into the calibration data set. Besides, we demonstrate a significant impact of the illumination source shape (measured vs. nominal top hat) on the resulting model quality. Most importantly, it will be shown that calibrated resist models based on a 3D (topographic) mask description perform better than resist models based on a 2D (Kirchhoff) mask approximation. Also, we show that a resist model calibrated with one-dimensional (lines & spaces) structures only can successfully predict the printing behavior of two-dimensional patterns (end-of-line structures).
机译：我们讨论了各个方面的抗蚀剂模型校准的方法，并评估了所得的预测精度。这项研究是在广泛的OPC数据集上进行的，其中包括通过浸没式光刻技术为45 nm技术节点获得的数千个CD值。我们介绍了一些实用方面，例如校准速度与校准数据集的大小以及模式选择对校准的作用。特别是，我们显示出数据集的一小部分足以提供准确的校准结果。但是，如果在校准数据集中另外包含一些关键模式，则可以大大提高总体预测能力。此外，我们证明了光源形状（测量值与名义礼帽的值）对所得模型质量的显着影响。最重要的是，将显示基于3D（地形）掩模描述的校准抗蚀剂模型的性能优于基于2D（基尔霍夫）掩模逼近的抗蚀剂模型。此外，我们显示了用一维（线和间隔）结构校准的抗蚀剂模型只能成功预测二维图案（线端结构）的印刷行为。

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