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首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Development of Novel positive-tone Resists for EUVL
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Development of Novel positive-tone Resists for EUVL

机译：研发用于EUVL的新型正性抗性

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We will discuss the effect of protecting group distribution on lithographic performance with Cyclic-Low-Molecular (CLM) resists which have some or no distribution of the protecting groups. By comparing the result of CLM resist with distribution of the protecting group and CLM resist with no distribution of that, the latter gave high resolution of sub 30nm hp by Electron beam (EB) Lithography. And also we have developed new CLM-resist for which the substituted position and number of protecting group have no dispersion, and evaluated their EB and Extreme Ultraviolet (EUV) patterning performance. The EUV lithographic evaluation of the novel low molecular weight amorphous resists 'CLMC-Resist' was carried out at SFET (small field exposure tool) in Semiconductor Leading Edge Technologies Inc. (Selete). Newly synthesized resists have shown high performance of sensitivity and resolution under EB or EUV exposures. In this paper, we outline the design of new molecular weight resists. The material properties, photochemistry and the patterning capability of these newly synthesizes low molecular weight resists are reported.
机译：我们将讨论具有低或无保护基团分布的环状低分子（CLM）抗蚀剂对保护基团分布对光刻性能的影响。通过比较具有保护基团分布的CLM抗蚀剂的结果和不具有保护基团分布的CLM抗蚀剂的结果，通过电子束（EB）光刻，后者可得到低于30nm hp的高分辨率。另外，我们还开发了新型的CLM抗蚀剂，其取代基和保护基团的数量均不分散，并评估了其EB和极紫外（EUV）图案化性能。新型低分子量非晶抗蚀剂“ CLMC-Resist”的EUV光刻评估是在Semiconductor Leading Edge Technologies Inc.（Selete）的SFET（小场曝光工具）上进行的。新合成的抗蚀剂在EB或EUV曝光下表现出很高的灵敏度和分辨率。在本文中，我们概述了新型分子量抗蚀剂的设计。报道了这些新合成的低分子量抗蚀剂的材料性能，光化学和构图能力。

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