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首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Theoretical analysis of energy degradation of electron in the resists
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Theoretical analysis of energy degradation of electron in the resists

机译：抗蚀剂中电子能量降解的理论分析

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摘要

In the electron-beam lithography and extreme-ultraviolet lithography electrons above ionization energy collide with resist materials and bring out their ionizations and electronic excitations. The degradation mechanism of the electrons in resists plays the important role to determine the resist properties. The energy distribution of the electrons ejected in collisions with the resist molecules and the yields of ions and excited states of resist molecule, and the contributions of molecular orbitals to the yields were calculated by using the binary-collision theory and the continuous-slowing-down approximation. Phenol was used as a model of phenol resists. The results show that the electron impacts produce mainly secondary electrons with the lower energy. The selectivity in the ionization and excitation processes was found to increase with decreasing the incident energy. The outermost molecular orbital ionizes more dominantly with decreasing the incident energy. The lower incident energy preferentially generates the electrically-excited triplets than the singlets of resist molecules.
机译：在电子束光刻和极紫外光刻中，高于电离能的电子与抗蚀剂材料发生碰撞，并导致其电离和电子激发。抗蚀剂中电子的降解机理在确定抗蚀剂性能方面起着重要作用。利用二元碰撞理论和连续减速法计算了与抗蚀剂分子碰撞时所喷射出的电子的能量分布，离子的产率和抗蚀剂分子的激发态，以及分子轨道对产率的贡献。近似。苯酚用作酚醛抗蚀剂的模型。结果表明，电子撞击主要产生能量较低的二次电子。发现电离和激发过程中的选择性随着入射能量的降低而增加。随着入射能量的降低，最外层的分子轨道更主要地离子化。较低的入射能量比抗蚀剂分子的单重态优先产生电激发的三重态。

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