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首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Gap-Fill Type HSQ/ZEP520A Bilayer Resist Process-(III) : Optimal Process Window for HSQ Air-Tip Formation
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Gap-Fill Type HSQ/ZEP520A Bilayer Resist Process-(III) : Optimal Process Window for HSQ Air-Tip Formation

机译：间隙填充型HSQ / ZEP520A双层抗蚀工艺-（III）：HSQ气嘴形成的最佳工艺窗口

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摘要

In previous study HSQ air-tip high density array with sub-20 nm radius of curvature were obtained by stripping ZEP520A after thermal reflow of ultra-thin HSQ (hydrogen silsesquioxane) gap-filled ZEP520A contact holes (C/H). And, the mechanical strength of HSQ spacer to resist shrinkage and thermal reflow of ZEP520A was found to play a dual role on the deformation of HSQ-coated C/H and thus the formation of HSQ air-tip. In this paper, effects of HSQ spacer width and thermal reflow of ZEP520A for HSQ air-tip formation are further studied for optimal process window. The effects of pattern and process parameters on the HSQ spacer width and shrink rate of thermal reflow are also evaluated. In short, thicker HSQ spacer is obtained for smaller C/H array size, looser pattern density, larger C/H CD, lower HSQ dilution ratio and thinner resist thickness. Dependence of HSQ spacer width on HSQ dilution ratio is stronger for thicker ZEP520A which implies that HSQ is deficient to fill the sidewall for deeper C/H. Lower shrink rate of diluted HSQ-coated ZEP520A under reflow is obtained for smaller C/H array size, looser pattern density, larger C/H CD, lower HSQ dilution ratio and thinner resist thickness. All of these relationships reflect the dependence of thermal reflow on the resistant effect of HSQ spacer width. Optimal process and pattern conditions for determining critical HSQ spacer width to form HSQ air-tip without bending or HSQ air-rod without shrunk of hole are described in detail.
机译：在先前的研究中，在超薄HSQ（氢倍半硅氧烷）间隙填充的ZEP520A接触孔（C / H）热回流之后，通过剥离ZEP520A，获得了曲率半径小于20 nm的HSQ空气尖端高密度阵列。并且，发现HSQ间隔物抵抗ZEP520A的收缩和热回流的机械强度对HSQ涂覆的C / H的变形以及由此形成HSQ空气尖端具有双重作用。本文进一步研究了HSQ垫片宽度和ZEP520A的热回流对HSQ气嘴形成的影响，以获得最佳工艺窗口。还评估了图案和工艺参数对HSQ垫片宽度和热回流收缩率的影响。简而言之，对于较小的C / H阵列尺寸，较宽松的图案密度，较大的C / H CD，较低的HSQ稀释比和较薄的抗蚀剂厚度，可以获得较厚的HSQ间隔物。对于较厚的ZEP520A，HSQ间隔物宽度对HSQ稀释比的依赖性更强，这意味着HSQ不足以填充侧壁以获得更深的C / H。对于较小的C / H阵列尺寸，较宽松的图案密度，较大的C / H CD，较低的HSQ稀释比和较薄的抗蚀剂厚度，在回流条件下获得的稀释的HSQ涂层ZEP520A的收缩率较低。所有这些关系反映了热回流对HSQ垫片宽度的抵抗作用的依赖性。详细描述了确定关键HSQ垫片宽度以形成不弯曲的HSQ气嘴或不缩孔的HSQ气杆的最佳工艺和图案条件。

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