首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Resist Roughness Bi-modality as Revealed by Two-dimensional FFT 2D Analysis
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Resist Roughness Bi-modality as Revealed by Two-dimensional FFT 2D Analysis

机译:二维FFT 2D分析揭示的抗蚀剂粗糙度双峰

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LER/LWR performance is currently considered as one of the major stumbling blocks complicating progress in the semiconductor technology. Line edge scans show that low frequency components clearly dominate the LER Power Spectral Density (PSD), thus implying a large characteristic length (>100-500 nm) phenomenon as the major LER source. Most of the theoretical analyses aimed to identify the origin of the LER were focused on the combined effect of exposure and CAR action statistics, and failed to explain the origin of this limit, which resulted in suggestions that there is more than just one phenomenon involved in LER generation. Depth profiling experiments were performed for a broad set of Polymer-PAG-Base combinations. Depth profiling PSD spectra have demonstrated that higher RMS values and correspondingly higher PSD amplitudes are associated with tighter PSD spectrum shifted towards lower frequencies (larger sizes of roughness features), which is very typical for all the cases investigated. The set of the PSD spectra obtained exhibit a pronounced bi-modal structure, indicating that there are at least two clearly noticeable independent roughness-controlling mechanisms.
机译:LER / LWR性能目前被认为是使半导体技术进步复杂化的主要绊脚石之一。线边缘扫描表明,低频成分明显主导了LER功率谱密度(PSD),因此暗示了作为主要LER源的大特征长度(> 100-500 nm)现象。大多数旨在确定LER发生原因的理论分析都集中在暴露和CAR行为统计的综合作用上,而未能解释这一限制的起因,这提示存在一个以上的现象LER生成。对多种聚合物-PAG-碱组合进行了深度分析实验。深度剖析PSD光谱已证明,较高的RMS值和相应较高的PSD振幅与向较低频率(较大的粗糙度特征尺寸)偏移的较紧的PSD光谱相关,这在所有研究的情况下都是非常典型的。所获得的一组PSD光谱表现出明显的双峰结构,表明至少有两个明显值得注意的独立粗糙度控制机制。

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