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首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Reworkable Spin-on Trilayer Materials: Optimization of Rework Process and Solutions for Manufacturability
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Reworkable Spin-on Trilayer Materials: Optimization of Rework Process and Solutions for Manufacturability

机译：可返工的旋涂三层材料：返工工艺的优化和可制造性解决方案

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Trilayer stacks with alternating etch selectivity were developed and extensively investigated for high NA immersion lithography at 32nm node and beyond. The conveyance of pattern transfer function from photoresist to Si-containing bottom anti-reflective coating (Si-BARC) and carbon-rich underlayer hard-mask (UL) elegantly solved the small etch budget issue for ultra-thin photoresists in immersion lithography. However, due to the hybrid nature of Si-BARC, many different behaviors were observed in comparison to conventional BARC. Lithographic performance, stability, and reworkability were among the most challenging issues for trilayer scheme. Despite of the rapid improvement in lithographic performance and stability of trilayer materials reported by several papers, the rework and cleaning of trilayer materials by wet chemistry remained a challenging problem for manufacturability. The dual function requirement of reflection control and pattern transfer (i.e. hard-masking) for spin-on Si-BARC mandates hybrid materials. Si-BARC containing both organic moiety and inorganic backbone were extensively studied and demonstrated excellent performance. However, the hybrid nature of Si-BARC necessitates the revisit of different wet chemistries and process adjustment is essential to achieve desirable results. In addition, the similarity in chemical structures between Si-BARC and 1ow-k dielectrics demands subtle rework differentiation by wet chemistry from a chemistry point of view. In our development, we strived to identify rework solutions for trilayer materials in both front-end-of-line (FEOL) and back-end-of-line (BEOL) applications. Rework solutions including diluted HF, Piranha, and 1ow-k compatible strippers were extensively investigated. The optimization of solution mixture ratios and processing conditions was systematically studied. Thorough defect inspection after rework was performed to ensure the readiness for manufacturability. Extensive Piranha rework study on stack wafers and monitor wafers were carried out and excellent results are reported.
机译：开发了具有交替蚀刻选择性的三层堆栈，并对其在32nm节点及以后的高NA浸没式光刻技术进行了广泛研究。从光刻胶到含硅的底部抗反射涂层（Si-BARC）和富碳底层硬掩模（UL）的图形转移功能的传递，很好地解决了浸没式光刻中超薄光刻胶的小蚀刻预算问题。但是，由于Si-BARC的混合性质，与常规BARC相比，观察到许多不同的行为。光刻性能，稳定性和可返工性是三层方案最具挑战性的问题。尽管几篇论文报道了光刻性能和三层材料稳定性的快速提高，但是通过湿化学对三层材料进行返工和清洗仍然是可制造性的难题。旋涂式Si-BARC的反射控制和图案转移（即硬掩模）的双重功能要求规定了混合材料。包含有机部分和无机主链的Si-BARC进行了广泛的研究，并显示出优异的性能。但是，Si-BARC的混合性质需要重新审视不同的湿化学方法，并且进行工艺调整对于获得理想的结果至关重要。另外，从化学的观点来看，Si-BARC和1ow-k电介质之间化学结构的相似性要求通过湿化学进行细微的返工区分。在我们的开发中，我们努力为前端（FEOL）和后端（BEOL）应用中的三层材料确定返工解决方案。包括稀释的HF，Piranha和1ow-k兼容剥离剂的返工解决方案得到了广泛的研究。系统地研究了溶液混合比和工艺条件的优化。返工后要进行彻底的缺陷检查，以确保可制造性就绪。进行了对堆叠晶圆和监控晶圆的大量食人鱼返工研究，并报告了出色的结果。

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