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首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Main chain decomposable star shaped polymer for EUV resist
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Main chain decomposable star shaped polymer for EUV resist

机译：用于EUV抗蚀剂的主链可分解星形聚合物

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The Extreme Ultra Violet lithography (EUVL) is expected to be the most promising semiconductor fabrication technology for 22 nm node and beyond. Kozawa and his colleagues have documented that non-constant acid diffusion coefficient have a significant impact on the latent image quality of 22 nm patterns.[1] We prepared a novel main chain decomposable star shaped polymer (STAR polymer) to examine the concept. STAR polymer consists of a core unit and several arm units which connect to the core unit as shown in Fig.1. The arm units are partially protected poly (p-hydroxystyrene) (PHS) base linear polymer. The core unit that attached on the arm units employs easily acid cleavable group. The adoption of living anion polymerization for the arm units of the STAR polymer makes the controlled polymerization of one monomer unit possible. Based on this material design concept, the protecting group on the arm unit is de-protected by the acid generated during exposure and continues its reaction at the Post Exposure Bake (PEB) step and the acid will also cleave the bonding of the core unit which would then result in a lower molecular weight polymer of lower T_g. The concept of the novel polymer, which is the decomposition of the core and protecting group of arm units of the STAR polymer, was confirmed with a gel-permeation-chromatography (GPC) study. The thermal property of the exposed and unexposed area was also investigated through a thermal flow method. The T_g decrease of the exposed area was observed with the STAR polymer, regardless of increase in T_g of the linear polymer. General lithographic performance on EUV exposure for STAR polymer was also discussed.
机译：极紫外光刻（EUVL）有望成为22纳米及以上节点最有前途的半导体制造技术。 Kozawa和他的同事已经证明，非恒定酸扩散系数会对22 nm图案的潜像质量产生重大影响。[1]我们准备了一种新颖的主链可分解星形聚合物（STAR polymer）来研究这一概念。 STAR聚合物由一个核心单元和几个连接到核心单元的臂单元组成，如图1所示。臂单元是部分保护的聚（对羟基苯乙烯）（PHS）基础线性聚合物。附着在臂单元上的核心单元采用易于酸裂解的基团。 STAR聚合物的臂单元采用活性阴离子聚合，可以控制一个单体单元的聚合。基于这种材料设计理念，手臂单元上的保护基团会被曝光过程中产生的酸去保护，并在曝光后烘烤（PEB）步骤中继续反应，该酸还会裂解核心单元的键合，然后将导致较低的T_g的较低分子量的聚合物。凝胶渗透色谱（GPC）研究证实了这种新型聚合物的概念，即STAR聚合物核心和臂单元保护基的分解。还通过热流方法研究了曝光和未曝光区域的热性质。 STAR聚合物观察到暴露区域的T_g降低，而与线性聚合物的T_g升高无关。还讨论了STAR聚合物在EUV曝光下的一般光刻性能。

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