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首页> 外文会议>Conference on Applications of Photonic Technology 6: Closing the Gap Between Theory, Development, and Application: Photonics North 2003 >The Effect of Contact Resistance in a Broad Band Semiconductor Optical Amplifier using SAG Techniques
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The Effect of Contact Resistance in a Broad Band Semiconductor Optical Amplifier using SAG Techniques

机译：使用SAG技术的宽带半导体光放大器中接触电阻的影响

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摘要

Ultra-broad band gain materials can be made by using selected area growth (SAG) techniques [ 1 ]. Material gain peak along the waveguide can vary as much as 300nm (from 1300nm to 1600nm) in InGaAsP/InP quantum well waveguides [1,2] This gain peak variation is obtained by both material composition changes and quantum well width changes. This kind of broad band materials can be used to make ultra broad tunable lasers [1], amplifiers, and wavelength converters [2]. Due to large band gap variation, the current injection will not be constant along the waveguide. The average serial resistance perpendicular to the waveguide direction will play an important role in the current distribution. In our simulation, a large serial resistance device will have a uniform current injection, therefore a uniform carrier distribution. But for a small serial resistance device, the carrier distribution along the waveguide is mainly decided by the local waveguide material bandgaps.
机译：超宽带增益材料可以通过使用选择面积生长（SAG）技术来制造[1]。在InGaAsP / InP量子阱波导中，沿着波导的材料增益峰可以变化300nm（从1300nm到1600nm）[1,2]。该增益峰变化是通过材料成分变化和量子阱宽度变化获得的。这种宽带材料可用于制造超宽可调激光器[1]，放大器和波长转换器[2]。由于带隙变化较大，电流注入沿波导的方向将不恒定。垂直于波导方向的平均串联电阻将在电流分布中起重要作用。在我们的仿真中，大型串联电阻器件将具有均匀的电流注入，因此具有均匀的载流子分布。但是对于小型串联电阻器件，沿波导的载流子分布主要由局部波导材料的带隙决定。

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