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首页> 外文会议>Conference on Emerging Lithographic Technologies Ⅴ Feb 27-Mar 1, 2001, Santa Clara, USA >In-situ stress measurement of molybdenum/silicon multilayers and low-stress multilayers for extreme ultraviolet lithography
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In-situ stress measurement of molybdenum/silicon multilayers and low-stress multilayers for extreme ultraviolet lithography

机译：钼/硅多层和低应力多层的原位应力测量，用于极端紫外光刻

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摘要

We developed an in-situ stress monitoring system using variable electrostatic capacitance with a Si wafer cantilever as the moveable electrode of a parallel capacitor. The stress behaviors during the deposition of thick molybdenum (Mo) single layers, conventional molybdenum/silicon (Mo/Si) multilayers and low-stress multilayers (Mo/Si multilayers modified using sub-multilayering and ion beam polishing (IBP)) were observed. In the case of a Mo single layer, at an early stage of deposition to about 40 A thickness the partial stress was tensile, and after that the partial stress became compressive. In the case of conventional Mo/Si multilayers, a modulation of stress was observed. After Mo-layer deposition the partial stress became tensile, whereas after Si-layer deposition it became compressive, leading to a compressive total stress. In the case of the low-stress multilayers that we developed, we observed the suppression of compressive stress changes of the Si-layer after the IBP of the Mo surface. The control of the partial stress changes of each layer will make it possible to control the total stress of multilayers.
机译：我们开发了一种现场应力监测系统，该系统使用可变静电电容，其中硅晶片悬臂用作并联电容器的可动电极。观察到在沉积厚钼（Mo）单层，常规钼/硅（Mo / Si）多层和低应力多层（使用亚多层和离子束抛光（IBP）改性的Mo / Si多层）沉积过程中的应力行为。在Mo单层的情况下，在沉积到约40 A厚度的早期阶段，局部应力是拉伸的，此后局部应力变为压缩的。在常规的Mo / Si多层膜中，观察到应力的调制。在Mo层沉积后，局部应力变为拉伸应力，而在Si层沉积后，局部应力变为压缩应力，从而导致压缩总应力。在我们开发的低应力多层的情况下，我们观察到在Mo表面的IBP之后抑制了Si层的压应力变化。通过控制各层的局部应力变化，可以控制多层的总应力。

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