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首页> 外文会议>Conference on Emerging Lithographic Technologies Ⅴ Feb 27-Mar 1, 2001, Santa Clara, USA >Bremsstrahlung Emission and Absorption in Electron Projection Lithography
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Bremsstrahlung Emission and Absorption in Electron Projection Lithography

机译：电子投影平版印刷中的ms致辐射和吸收

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摘要

Electron projection lithography (EPL) uses 100 keV electrons to minimize the effects of beam blur, minimize forward scattering, and expose high aspect ratio resist patterns. When these electrons undergo collisions in the substrate, they decelerate and emit Bremsstrahlung photons. The Bremsstrahlung photons have a continuum spectrum with high energy, and absorption of these photons might damage device layers already present during the electron lithography step. A simulator that uses a Monte Carlo approach to track electron trajectories in the substrate calculates the Bremsstrahlung spectrum and its spatial distribution. The Bremsstrahlung temporal spectrum and spatial distribution was calculated with a model selected after reviewing various approaches described in the literature. The density of the Bremsstrahlung photons absorbed by the film stack of device layers is then calculated. Bremsstrahlung absorption by thin oxide layers on silicon is small compared to the SiO_2 bond density. For gate dielectrics containing high atomic number metals such as HfO_2, the absorbed flux of photons generated by the electron exposure is about one order of magnitude larger than for SiO_2 gate dielectrics. Because the gate dielectric for future CMOS devices is only a few nanometers in thickness and the pixel exposure time is only a fraction of a millisecond, few of the photons generated by electron exposure are absorbed in the gate dielectric. The effects of absorption in other layers is negligible. The calculated number of charges in the gate dielectric that result from photon absorption is not large enough to shift the flat band voltage by more than ～1 mV. For the cases simulated with this model, electron projection lithography is not expected to cause significant effects on CMOS gate dielectric properties, even for metal oxide dielectrics.
机译：电子投影光刻（EPL）使用100 keV电子来最大程度地减少束模糊的影响，最小化正向散射并曝光高纵横比的抗蚀剂图案。当这些电子在基板中发生碰撞时，它们减速并发射emit致辐射的光子。 ms致发光光子具有高能连续谱，这些光子的吸收可能会损坏在电子光刻步骤中已经存在的器件层。使用蒙特卡洛方法跟踪衬底中电子轨迹的模拟器可以计算the致辐射光谱及其空间分布。在回顾了文献中描述的各种方法之后，使用选定的模型计算了ms致的时间谱和空间分布。然后计算被器件层的薄膜叠层吸收的Bre致辐射光子的密度。与SiO_2键的密度相比，薄氧化层在硅上的致辐射吸收小。对于包含高原子序数金属（例如HfO_2）的栅极电介质，通过电子暴露产生的光子吸收通量比SiO_2栅极电介质大约一个数量级。因为用于将来的CMOS器件的栅极电介质的厚度仅为几纳米，并且像素的曝光时间仅为毫秒的几分之一，所以电子曝光所产生的光子很少吸收到栅极电介质中。在其他层中吸收的影响可以忽略不计。计算出的由光子吸收引起的栅极电介质中的电荷数量不足以使平带电压偏移超过〜1 mV。对于用该模型模拟的情况，即使对于金属氧化物电介质，也不能期望电子投影光刻对CMOS栅极电介质性能产生重大影响。

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