• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Conference on Emerging Lithographic Technologies Ⅴ Feb 27-Mar 1, 2001, Santa Clara, USA >Comparison of Different Source Concepts for EUVL
【24h】

Comparison of Different Source Concepts for EUVL

机译：EUVL不同来源概念的比较

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

There are some candidates discussed as potential high power EUV sources for EUV lithography. Laser produced and discharge produced plasmas are most promising. In principle, the most efficient steady state plasma can be well defined with respect to plasma temperature and density. However, the conversion efficiency of a practical EUV source is mainly determined by the efficiency of plasma generation and heating and by the dynamics during the emitting phase. The different approaches to achieve the most efficient EUV source imply different heating mechanisms, different plasma geometries, different plasma densities and different time scales. Moreover, each approach has individual technical aspects that influence the efficiency and the technical chances of realization. A general approach for comparing different EUV source concepts is presented based on a discussion of fundamental aspects of the plasma generation and based on technical issues.
机译：有一些候选人被讨论为潜在的高功率EUV光源，用于EUV光刻。激光产生和放电产生的等离子体是最有前途的。原则上，关于等离子体温度和密度，可以很好地定义最有效的稳态等离子体。但是，实际EUV光源的转换效率主要取决于等离子体产生和加热的效率以及发射阶段的动力学。实现最高效EUV源的不同方法意味着不同的加热机制，不同的等离子体几何形状，不同的等离子体密度和不同的时标。此外，每种方法都有影响效率和实现技术机会的个别技术方面。基于对等离子体产生基本方面的讨论并基于技术问题，提出了一种比较不同EUV源概念的通用方法。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号