• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Conference on Emerging Lithographic Technologies VI Pt.1, Mar 5-7, 2002, Santa Clara, USA >EUVL mask blank repair
【24h】

EUVL mask blank repair

机译：EUVL面膜空白修复

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

EUV mask blanks are fabricated by depositing a reflective Mo/Si multilayer film onto super-polished substrates. Small defects in this thin film coating can significantly alter the reflected field and introduce defects in the printed image. Ideally one would want to produce defect-free mask blanks; however, this may be very difficult to achieve in practice. One practical way to increase the yield of mask blanks is to effectively repair multilayer defects, and to this effect we present two complementary defect repair strategies for use on multilayer-coated EUVL mask blanks. A defect is any area on the mask which causes unwanted variations in EUV dose in the aerial image obtained in a printing tool, and defect repair is correspondingly defined as any strategy that renders a defect unprintable during exposure. The term defect mitigation can be adopted to describe any strategy which renders a critical defect non-critical when printed, and in this regard a non-critical defect is one that does not adversely affect device function. Defects in the patterned absorber layer consist of regions where metal, typically chrome, is unintentionally added or removed from the pattern leading to errors in the reflected field. There currently exists a mature technology based on ion beam milling and ion beam assisted deposition for repairing defects in the absorber layer of transmission lithography masks, and it is reasonable to expect that these this technology will be extended to the repair of absorber defects in EUVL masks. However, techniques designed for the repair of absorber layers can not be directly applied to the repair of defects in the mask blank, and in particular the multilayer film. In this paper we present for the first time a new technique for the repair of amplitude defects as well as recent results on the repair of phase defects.
机译：EUV掩模坯料是通过在超级抛光的基板上沉积一层反射Mo / Si多层膜而制成的。这种薄膜涂层中的小缺陷会显着改变反射场，并在打印图像中引入缺陷。理想情况下，希望生产无缺陷的掩模坯料。但是，这在实践中可能很难实现。提高掩模坯件成品率的一种实用方法是有效修复多层缺陷，为此，我们提出了两种互补的缺陷修复策略，用于多层涂覆的EUVL掩模坯件。缺陷是指掩模上导致在印刷工具中获得的航拍图像中EUV剂量产生不必要变化的任何区域，缺陷修复相应地定义为使缺陷在曝光过程中无法印刷的任何策略。可以采用术语“减少缺陷”来描述在打印时使严重缺陷变为非严重的任何策略，就这一点而言，非严重缺陷是不会对器件功能产生不利影响的一种。图案化吸收层中的缺陷由无意中从图案中添加或去除金属（通常是铬）的区域组成，从而导致反射场中的误差。当前存在一种基于离子束铣削和离子束辅助沉积的成熟技术来修复透射光刻掩模的吸收层中的缺陷，可以合理地期望将这些技术扩展到修复EUVL掩模的吸收层缺陷中。 。但是，为吸收层的修复而设计的技术不能直接应用于修复掩模坯料，特别是多层膜中的缺陷。在本文中，我们首次提出了一种新的振幅缺陷修复技术，以及有关相位缺陷修复的最新结果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号