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首页> 外文会议>Conference on Emerging Lithographic Technologies VI Pt.1, Mar 5-7, 2002, Santa Clara, USA >100-picometer interferometry for EUVL
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100-picometer interferometry for EUVL

机译：用于EUVL的100色差干涉仪

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摘要

Future extreme ultraviolet lithography (EUVL) steppers will, in all likelihood, have six-mirror projection cameras. To operate at the diffraction limit over an acceptable depth of focus each aspheric mirror will have to be fabricated with an absolute figure accuracy approaching 100pm rms. We are currently developing visible light interferometry to meet this need based on modifications of our present phase shifting diffraction interferometry (PSDI) methodology where we achieved an absolute accuracy of 250pm. The basic PSDI approach has been further simplified, using lensless imaging based on computational diffractive back-propagation, to eliminate auxiliary optics that typically limit measurement accuracy. Small remaining error sources, related to geometric positioning, CCD camera pixel spacing and laser wavelength, have been modeled and measured. Using these results we have estimated the total system error for measuring off-axis aspheric EUVL mirrors with this new approach to interferometry.
机译：未来的极紫外光刻（EUVL）步进机很可能将配备六镜投影相机。为了在可接受的焦深范围内在衍射极限下工作，每个非球面镜都必须以接近100pm rms的绝对图形精度来制造。我们目前正在根据对我们目前的相移衍射干涉仪（PSDI）方法进行修改的基础上，开发可见光干涉仪来满足这一需求，该方法的绝对精度为250pm。使用基于计算衍射反向传播的无透镜成像，进一步简化了基本PSDI方法，从而消除了通常会限制测量精度的辅助光学器件。与几何定位，CCD相机像素间距和激光波长有关的少量剩余误差源已经过建模和测量。利用这些结果，我们估计了使用这种新的干涉测量方法测量离轴非球面EUVL反射镜的总系统误差。

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