首页> 外文会议>Conference on Emerging Lithographic Technologies VIII pt.2; 20040224-20040226; Santa Clara,CA; US >Evaluation of contamination deposition on pinholes used in EUV at-wavelength PDI
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Evaluation of contamination deposition on pinholes used in EUV at-wavelength PDI

机译:评估EUV波长PDI中使用的针孔上的污染物沉积

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摘要

Point diffraction interferometry (PDI) is a promising candidate of the wavefront metrology for EUV lithographic projection optics. However, the pinhole used in the PDI is easily filled up with carbon contamination induced by EUV irradiation. We have evaluated the filling rate of pinholes by measuring decreasing rates of intensity of EUV radiation that passed through the pinholes. As a result, we found the filling rates of the pinholes depend on their materials and blowing of the oxygen. The filling rate was the slowest when the pinhole made of Ni was used and oxygen was blown.
机译:点衍射干涉仪(PDI)是EUV光刻投影光学器件波前计量学的有希望的候选者。但是,PDI中使用的针孔很容易被EUV辐射引起的碳污染填满。我们通过测量穿过针孔的EUV辐射强度降低的速率来评估针孔的填充率。结果,我们发现针孔的填充率取决于其材料和氧气的吹入。当使用由镍制成的针孔并吹入氧气时,填充速率最慢。

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