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首页> 外文会议>Conference on Emerging Lithographic Technologies VIII pt.2; 20040224-20040226; Santa Clara,CA; US >The erosion of materials exposed to a laser-pulsed plasma (LPP) extreme ultraviolet (EUV) illumination source
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The erosion of materials exposed to a laser-pulsed plasma (LPP) extreme ultraviolet (EUV) illumination source

机译：暴露于激光脉冲等离子体（LPP）极紫外（EUV）照明源的材料的腐蚀

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摘要

A critical issue in the realization of EUV lithography (EUVL) as a production technology is the lifetime of the condenser, the optic in closest proximity to any compact, high-power EUV source. During operation of the Engineering Test Stand (ETS), a full-field, high-power EUVL alpha tool, the silicon/molybdenum multilayer mirrors used as a condenser were eroded by extended exposure to the LPP source. The erosion rate varied considerably, and diagnostic instrumentation on the ETS was not intended to address this issue, so the cause of this erosion was not determined at the time. We present here the results of experiments in which samples of gold, molybdenum, and silicon were exposed to an LPP using a liquid xenon jet as the target. The measured erosion rates suggest a sputtering mechanism. Observations of the plasma environment at the condenser distance show the presence of fast ions, which, if they are xenon, have kinetic energies of tens of keV. Such ions would contribute significantly to condenser erosion.
机译：作为生产技术，实现EUV光刻（EUVL）的关键问题是聚光镜的使用寿命，聚光镜最接近任何紧凑的高功率EUV光源。在全场大功率EUVL alpha工具工程测试台（ETS）的操作过程中，长时间暴露于LPP源会腐蚀用作聚光镜的硅/钼多层反射镜。腐蚀速率变化很大，并且ETS上的诊断仪器并非旨在解决此问题，因此当时尚无法确定腐蚀的原因。我们在这里介绍实验结果，其中使用液态氙射流作为目标，将金，钼和硅的样品暴露于LPP。测得的腐蚀速率表明溅射机理。在冷凝器距离处对等离子体环境的观察表明存在快速离子，如果它们是氙气，则它们的动能为几十keV。这样的离子将极大地影响冷凝器的腐蚀。

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