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首页> 外文会议>Conference on High Temperature Superconductivity Coral Gables, Florida January 7-13 1999 >Filamentary dopant condensation in HgBa_2CuO_(4+ delta )
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Filamentary dopant condensation in HgBa_2CuO_(4+ delta )

机译：HgBa_2CuO_（4+ delta）中的丝状掺杂剂凝聚

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摘要

Diffraction experiments on the titled compound indicate that the O_5 dopants amy partially occupy two sites, one of which is coplanar with Hg but does not produce superconductivity, while occupancy of the out-of-plane site does; occupancies of the two configurations cross abruptly near delta chemical bounds delta _2 chemical bounds 0.19. The phase diagram, with a plateau in T_c( delta ), delta _1 < delta _2, rather than the usual parabola, is remarkably similar to that seen in the thermal properties of uncompensated semiconductor impurity bands near the metal-insulator transition, as the author suggested previously. Here the nature of the defects which play the compensating role is identified for other cuprates, in order to explain why the titled compound, alone among the cuprates, has been observed to display "ideal" behavior. Some intrinsic limitations of Rietveld analysis of powder diffraction data fr indentifying filamentary formation are also discussed, as is the possibility of explaining the data with antiferromagnetic stripe models. Predictions are made for the phase diagram of the superconductive filling factor.
机译：对标题化合物的衍射实验表明，O_5掺杂剂的amy部分占据了两个位点，其中一个与Hg共面，但不产生超导性，而占据平面外的位点却确实如此。两个构型的占据在δ化学界附近突然发生变化，δ_2化学界为0.19。如作者所述，在T_c（delta）处于平稳状态的相图，delta _1

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