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Photorefractivity and luminescence properties of Sn-doped SiO_2 glasses

机译:Sn掺杂SiO_2玻璃的光折射率和发光性能

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摘要

Tin-doped silica glass has been recently investigated as photosensitive optical material for optoelectronic device applications. The mechanisms responsible for the material photosensitivity and the optical activity induced by Sn doping are presented. Studies performed on perform slides and on sol-gel bulk samples show that the refractive index change can be ascribed to structural rearrangements induced by photochemical reactions. Photoluminescence measurements indicate that tin atoms are embedded in Sn-substituted Si sites of the silica network. The modified structure shows extremely high stability, and gratings written in fibers exhibit a negligible erasure in 30 minutes below 600℃. At high UV radiation fluences the refractive index modulation saturates and does not exhibit any decrease. Optical measurements and electron paramagnetic resonance data show that different processes contribute to the refrac tive index change. The comparison between samples with and without optical absorption at the UV laser wavelength shows that the presence and the consequent laser-induced bleaching of the 5 eV absorption band due to oxygen deficient centers does not appear crucial for photosensitivity. In fact a refractive index change is also observed in samples without detectable absorption at this energy.
机译:最近已经研究了掺锡的二氧化硅玻璃作为光电子器件应用的光敏光学材料。提出了引起材料光敏性和锡掺杂引起的光学活性的机理。对载玻片和溶胶-凝胶块状样品进行的研究表明,折射率变化可归因于光化学反应引起的结构重排。光致发光测量表明,锡原子嵌入在二氧化硅网络的Sn取代的Si位点中。修改后的结构显示出极高的稳定性,并且在600℃以下30分钟内,用纤维制成的光栅显示的擦除度可忽略不计。在高紫外线辐射通量下,折射率调制达到饱和,并且没有任何降低。光学测量和电子顺磁共振数据表明,不同的过程会导致折射率变化。在具有和不具有在紫外线激光波长下的光吸收的样品之间的比较表明,由于缺氧中心导致的5 eV吸收带的存在以及随之而来的激光诱导的漂白对于光敏性似乎不是至关重要的。实际上,在该能量下,在没有可检测的吸收的样品中也观察到折射率变化。

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