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Theoretical investigation of properties of InAsSb mid-wave infrared detectors

机译:InAsSb中波红外探测器性能的理论研究

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In this work we present the theoretical investigation of the electrical and optical properties of high operating temperature (HOT) mid-wavelength infrared detectors (5 μm at 230 K) based on InAsSb/AlSb heterostructures. In this work the performance comparison of barrier detectors with different doping concentration of n-type absorbing layer is presented. The barrier structure was simulated by commercially available software APSYS. We report on the dependence of the calculated current responsivity on the active layer thickness for a different doping concentration and doping concentration for optimal absorber thickness. Moreover, we show the influence of the bottom contact material on device's performance.
机译:在这项工作中,我们介绍了基于InAsSb / AlSb异质结构的高工作温度(HOT)中波长红外探测器(在230 K下5μm)的电学和光学特性的理论研究。在这项工作中,提出了具有不同掺杂浓度的n型吸收层的势垒探测器的性能比较。屏障结构由可商购的软件APSYS模拟。我们报告了对于不同的掺杂浓度和最佳吸收体厚度的掺杂浓度,所计算的电流响应度对有源层厚度的依赖性。此外,我们展示了底部接触材料对设备性能的影响。

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