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首页> 外文会议>13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods >Long term stability study of InAsSb mid-wave infrared HOT detectors passivated through two step passivation technique
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Long term stability study of InAsSb mid-wave infrared HOT detectors passivated through two step passivation technique

机译：通过两步钝化技术钝化的InAsSb中波红外HOT检测器的长期稳定性研究

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摘要

We report on the investigation of the long term stability study of InAs_(1-x)Sb_x (x=0.09) high operation temperature (HOT) photodiode grown on GaAs substrate. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The dark current densities of sulphur anodic film, SU-8 photoresist and unpassivated devices was compared. Obtained results indicates that the surface leakage current was not fully supressed by unipolar electron barrier. The most stable behaviour after an exposure of 6 months to atmosphere and annealing at 373 K. for 72 h was observed for sulphur anodic passivation. This technique turned to be effective also in reduction of oxygen (O) 2s peak in X-ray photoelectron spectroscopy (XPS) in comparison with only etched sample.
机译：我们报告了在GaAs衬底上生长的InAs_（1-x）Sb_x（x = 0.09）高工作温度（HOT）光电二极管的长期稳定性研究的调查报告。提出了电化学钝化技术，以改变台面侧壁的性能，并获得被SU-8负性光刻胶覆盖的阳极硫涂层。比较了硫阳极膜，SU-8光刻胶和未钝化器件的暗电流密度。结果表明，单极电子势垒不能完全抑制表面漏电流。暴露于大气中6个月并在373 K下退火72小时后，观察到最稳定的行为是硫阳极钝化。与仅蚀刻样品相比，该技术在减少X射线光电子能谱（XPS）中的氧（O）2s峰方面也很有效。

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  • 来源
  • 会议地点 Szczyrk(PL)
  • 作者

    K. Michalczewski; F. Ivaldi; L. Kubiszyn; D. Benyahia; J. Ciosek; J. Boguski; A. Keblowski; P. Martyniuk; J. Piotrowski; A. Rogalski;

  • 作者单位

    Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland;

    Vigo System S.A., 129/133 Poznahska Str., 05-850 Ozarow Mazowiecki, Poland;

    Vigo System S.A., 129/133 Poznahska Str., 05-850 Ozarow Mazowiecki, Poland;

    Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland;

    Institute of Optoelectronics, Military University of Technology 2 Urbanowicza Str., 00-908 Warsaw, Poland;

    Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland;

    Vigo System S.A., 129/133 Poznahska Str., 05-850 Ozarow Mazowiecki, Poland;

    Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland;

    Vigo System S.A., 129/133 Poznahska Str., 05-850 Ozarow Mazowiecki, Poland;

    Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    InAsSb; HOT; leakage current; XPS; long term stability;

    机译：InAsSb;热;漏电流XPS；长期稳定性;

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