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首页> 外文会议>Conference on laser applications in microelectronic and optoelectronic manufacturing VII; 20090126-29; San Jose, CA(US) >Effects of pulse duration on the ns-laser pulse induced removal of thin film materials used in photovoltaics
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Effects of pulse duration on the ns-laser pulse induced removal of thin film materials used in photovoltaics

机译：脉冲持续时间对ns激光脉冲诱导的光伏材料薄膜材料去除的影响

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摘要

The removal of thin films widely used in photovoltaics as (transparent) electrodes (e.g. SnO_2, molybdenum) or solar absorber (e.g. amorphous silicon) materials is studied experimentally using multi-kHz diode-pumped solid state lasers in the visible and infrared spectral region. The film processing (or what is commonly known as P1, P2, or P3 laser scribing) is performed through the film-supporting glass plate of several millimeter thickness by using a galvo laser scanner setup equipped with f-theta optics. The dependence of the film removal fluence threshold on the laser pulse duration (～8 ns to ～40 ns) is investigated systematically for two different laser wavelengths of 532 nm and 1064 nm. The laser-scribing of continuous lines suitable for thin-film solar cell production is demonstrated successfully at scribe speeds on the order of meters per second. The experimental results are discussed on the basis of laser ablation models considering optical, geometrical, and thermal material properties and are additionally supported by numerical simulations.
机译：使用可见光和红外光谱区域中的多kHz二极管泵浦固态激光器，通过实验研究了去除光伏材料中用作（透明）电极（例如SnO_2，钼）或太阳能吸收体（例如非晶硅）的薄膜的方法。使用配备f-theta光学元件的振镜激光扫描仪，通过几毫米厚的薄膜支撑玻璃板执行薄膜处理（或通常称为P1，P2或P3激光划片）。系统地研究了两种波长分别为532 nm和1064 nm的薄膜去除通量阈值对激光脉冲持续时间（〜8 ns至〜40 ns）的依赖性。适用于薄膜太阳能电池生产的连续生产线的激光切割已成功证明，切割速度为每秒米。在考虑到光学，几何和热材料特性的激光烧蚀模型的基础上讨论了实验结果，并且数值模拟进一步支持了该结果。

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