Synthesis of dispersion-controlled mirror based on the semiconductor materials for near IR femtosecond lasers

机译：基于半导体材料的近红外飞秒激光器色散控制镜的合成

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It has been proposed the design of mirrors for near IR femtosecond lasers with given phase characteristics based on the Ⅲ-Ⅴ compound semiconductors using MBE-technologies with reproducible phase parameters due to precise control of the layer parameters. The designed structure of two-part multilayer mirror includes the bottom part with a great number of AlGaAs-pairs and the top several antireflection layers. The specified negative near-constant group delay dispersion can be realized at certain band of spectrum.

机译：已经提出了基于Ⅲ-Ⅴ族化合物半导体的具有给定相位特性的近红外飞秒激光器的反光镜的设计，该技术采用了层参数的精确控制，并且具有可再现的相位参数的MBE技术。分为两部分的多层反射镜的设计结构包括具有大量AlGaAs对的底部和顶部的几个抗反射层。指定的负近恒定群时延色散可以在某些频谱带上实现。

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来源
《Conference on Laser Optics 2000: Ultrafast Optics and Superstrong Laser Fields Jun 26-30, 2000, St. Petersburg, Russia》|2000年|p.48-51|共4页
会议地点 St. Petersburg(RU)
作者
N.D.Goldina; E.V.Pestryakov; V.I.Trunov;
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作者单位

Institute of Laser Physics SB RAS, Novosibirsk, Russia;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
semiconductor mirror; group-delay dispersion; thin-film design; femtosecond laser;

机译：半导体镜群时延分散薄膜设计；飞秒激光;

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3. Tunable Yb:CaF2-SrF2 laser and femtosecond mode-locked performance based on semiconductor saturable absorber mirrors [J] . Zhang Feng, Zhu Hongtong, Liu Jie, Applied optics . 2016,第29期

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4. Synthesis of dispersion-controlled mirror based on the semiconductor materials for near IR femtosecond lasers [C] . E, V.I.Trunov, E.V.Pestryakov, Conference on ultrafast optics and superstrong laser fields . 2001

机译：基于近红外近秒激光的半导体材料的分散控制镜的合成
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Synthesis of dispersion-controlled mirror based on the semiconductor materials for near IR femtosecond lasers

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