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首页> 外文会议>Conference on Light-Emitting Diodes: Research, Manufacturing, and Applications VII Jan 27-29, 2003 San Jose, California, USA >Ultra-violet nitride LED fabrication for high-flux white LED
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Ultra-violet nitride LED fabrication for high-flux white LED

机译：用于高通量白光LED的紫外氮化物LED制造

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摘要

The requirements for maximizing the external quantum efficiency of UV nitride LEDs are discussed. It is shown that as the chip wavelength progressively decreases, nitride epi growth on a sapphire substrate becomes advantageous in terms of light extraction. The epilayer requirements for UV LEDs dictate the growth of n-AlGaN, with increasing Al contents, and the growth of UV-transparent p-GaN. It is shown that MOCVD growth in a Emcore D-180 or Ganzilla reactor is ideal for meeting the stringent epilayer requirements. Increasing light extraction efficiency and wall-plug efficiency also requires optimization of the reflecting P-contact. The relative merits of Al- and Ag-based reflecting contacts are discussed. Performance data for UV LEDs on sapphire, for drive currents up to 700 mA is shown. Finally, a practical high power UV-based white lamp is demonstrated.
机译：讨论了最大化UV氮化物LED的外部量子效率的要求。已经表明，随着芯片波长逐渐减小，在光提取方面，蓝宝石衬底上氮化物外延生长变得有利。 UV LED的外延层要求决定了随着Al含量的增加，n-AlGaN的增长以及对紫外线透明的p-GaN的增长。结果表明，在Emcore D-180或Ganzilla反应器中进行MOCVD生长非常适合满足严格的外延层要求。提高光提取效率和墙上插头效率还需要优化反射式P触点。讨论了铝和银基反射触点的相对优点。显示了蓝宝石上UV LED的性能数据，驱动电流高达700 mA。最后，展示了一种实用的基于紫外线的大功率白光灯。

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