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首页> 外文会议>Conference on Light-Emitting Diodes: Research, Manufacturing, and Applications VII Jan 27-29, 2003 San Jose, California, USA >AlGaInP light-emitting diodes with omni-directionally reflecting submount
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AlGaInP light-emitting diodes with omni-directionally reflecting submount

机译：具有全向反射基座的AlGaInP发光二极管

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摘要

A novel AlGalnP light-emitting diode (LED) is presented that employs high-reflectivity omnidirectional reflector (ODR) submounts. It is shown that the reflective-submount (RS) LED has a higher light-extraction efficiency than conventional LEDs. Red AlGalnP RS-LEDs bonded to Si-substrates are demonstrated using a silver-based ODR. The ODR is perforated by an array of small-area low-resistance ohmic contacts. The optical and electrical characteristics of the RS-LEDs are presented and compared to conventional AlGalnP absorbing substrates (AS) LEDs with distributed Bragg reflectors (DBR). It is shown that the light output from the RS-LED exceeds that of AS-LEDs by about a factor of two.
机译：提出了一种采用高反射率全向反射器（ODR）基座的新型AlGalnP发光二极管（LED）。结果表明，反射式底座（RS）LED的光提取效率高于常规LED。使用基于银的ODR演示了与Si基板结合的红色AlGalnP RS-LED。 ODR由一系列小面积的低电阻欧姆触点打孔。介绍了RS-LED的光学和电气特性，并将其与具有分布式布拉格反射器（DBR）的常规AlGalnP吸收性衬底（AS）LED进行了比较。可以看出，从RS-LED输出的光比AS-LED的光大约大两倍。

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