Mechanical effects of fatigue and charge on CMOS MEMS

机译：疲劳和电荷对CMOS MEMS的机械影响

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COMS MEMS devices, fabricated from up to 13 years of materials to create independent conducting paths, are subject to incremental fracture at high stress and to charging effects. This paper expands on preliminary research, which has revealed several stages of change in CMOS MEMS physical properties as they are exposed to resonant motion. Cracks are first induced inside the stiffest layers, often silicon dioxide, in laterally resonant test structures with cyclic stress of 620 MPs.

机译：COMS MEMS器件由长达13年的材料制成，可创建独立的导电路径，在高应力下会遭受逐渐断裂的影响，并受到充电作用。本文在初步研究的基础上进行了扩展，该研究揭示了CMOS MEMS物理性能在经历共振运动后会发生多个变化。在横向共振测试结构中，首先在最坚硬的层（通常为二氧化硅）内部产生裂纹，并产生620 MPs的循环应力。

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来源
《Conference on MEMS Reliability for Critical Applications 20 September 2000 Santa Clara, USA》|2000年|p.108-116|共9页
会议地点 Santa Clara CA(US)
作者
Kevin M.Frederick; Gary K.Fedder;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
fatigue; charging; CMOS; MEMS;

机译：疲劳;充电； CMOS;微机电系统;

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Mechanical effects of fatigue and charge on CMOS MEMS

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