首页> 外文会议>Conference on Microwave and Terahertz Photonics; 20040429-20040430; Strasbourg; FR >Opto-electronic control of coplanar transmission lines up to 110 GHz
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Opto-electronic control of coplanar transmission lines up to 110 GHz

机译:高达110 GHz的共面传输线的光电控制

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摘要

Lumped circuit and 3D-electromagnetic models are presented for a photo-induced plasma that induces local changes in the dielectric properties of a coplanar waveguide transmission line to switch millimeter waves, propagating along transmission lines on BCB coated high resistive silicon substrates. Measurements up to 110 GHz are compared with the various developed models. The insertion loss of these transmission lines was only 1 dB/mm at 100 GHz. The modulation of S_(21) was about 40 dB at 110 GHz for an optical power of 60 mW focused on one slot between signal and ground. S_(11) could only be fitted with a lumped circuit model when introducing a frequency dependent impedance was introduced.
机译:提出了用于光致等离子体的集总电路和3D电磁模型,该光致等离子体引起共面波导传输线的介电特性的局部变化以切换毫米波,并沿BCB涂覆的高电阻硅基板上的传输线传播。将高达110 GHz的测量结果与各种已开发的模型进行了比较。这些传输线在100 GHz时的插入损耗仅为1 dB / mm。对于60 mW的光功率,S_(21)的调制在110 GHz下约为40 dB,聚焦在信号与地面之间的一个时隙上。当引入频率相关阻抗时,S_(11)只能装配集总电路模型。

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