BALLISTIC MAGNETORESISTANCE FOR MAGNETIC, CHEMICAL SENSING

机译：磁性，化学感应的磁悬浮磁阻

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

This paper reviews our results on ballistic magnetoresistance (BMR) in ferromagnetic nanocontacts electrodeposited between bulk wire or microfabricated templates. Large BMR effect of several thousand percent can be observed in these contacts in fields of only a few hundred oersteds at room temperature. There are many intricacies and subtleties in the highly interesting BMR phenomenon; the effect itself is highly delicate and small distinctions in experiments can mean the difference between observing or disguising it. Our recent results on single-atom ballistic conductors show the electronic origin of the BMR effect, and also provide incontrovertible evidence against magnetostriction and other possible artifacts. Finally, we describe a novel method to electronically study the synthesis of a single molecule at the quantum level at room temperature using metallic ballistic quantum conductors.

机译：本文综述了我们在电沉积在散装金属丝或微型模板之间的铁磁纳米触点中的防弹磁阻（BMR）结果。在室温下仅几百奥斯特的场中，可以在这些触点中观察到数千％的大BMR效应。高度有趣的BMR现象有许多复杂性和微妙之处。效果本身非常微妙，实验中的微小差异可能意味着观察或掩饰之间的差异。我们最近在单原子弹道导体上的研究结果表明了BMR效应的电子起源，也为磁致伸缩和其他可能的伪像提供了无可争议的证据。最后，我们描述了一种新颖的方法，用于使用金属弹道量子导体在室温下以电子水平研究单个分子的合成。

著录项

来源
《Conference on Nanoparticles 2004: Nanoelectronics, Nanophotonics, and Nanomagnetics vol.7; 20041025-26; Stamford,CT(US)》|2004年|127-141|共15页
会议地点 StamfordCT(US)
作者
Harsh Deep Chopra; Susan Z. Hua;
展开▼
作者单位

Materials Program, Mechanical and Aerospace Engineering Department 613 Furnas Hall, SUNY-Buffalo Buffalo, NY 14260;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词

相似文献

外文文献
中文文献
专利

1. Classical magnetoresistance of a ballistic electron gas constrained to non-planar topographies in a lattice of antidots under tilted magnetic field [J] . Sotomayor N.M., Cabral L.A., Davila L.Y.A., Physica, E. Low-dimensional systems & nanostructures . 2012,第3期

机译：倾斜磁场下解毒剂晶格中约束于非平面形貌的弹道电子气的经典磁阻
2. Ballistic versus diffusive magnetoresistance of a magnetic point contact - art. no. 104428 [J] . Tagirov LR., Efetov KB., Vodopyanov BP. Physical Review, B. Condensed Matter . 2001,第10期

机译：磁点接触的弹道与扩散磁阻-艺术。没有。 104428
3. Magnetoresistance of metallic magnetic multilayers in the ballistic regime for a spacer [J] . Los VF., Pogorily AN. Journal of Physics, D. Applied Physics: A Europhysics Journal . 2000,第11期

机译：间隔物的弹道状态下的金属磁性多层膜的磁阻
4. BALLISTIC MAGNETORESISTANCE FOR MAGNETIC, CHEMICAL SENSING [C] . Harsh Deep Chopra, Susan Z. Hua, Business Communications Company. Inc.(BCC) Conference on Nanoparticles: Nanoelectronics, Nanophotonics, and Nanomagnetics . 2005

机译：磁性，化学传感的弹道磁阻
5. A nanomagnetic study of phase transition in manganite thin films and ballistic magnetoresistance in magnetic nanocontacts. [D] . Chung, Seok-Hwan. 2003

机译：锰磁性薄膜中相变和磁性纳米接触中的弹道磁阻的纳米磁性研究。
6. Magnetic Field Sensors Based on Giant Magnetoresistance (GMR) Technology: Applications in Electrical Current Sensing [O] . Candid Reig, María-Dolores Cubells-Beltran, Diego Ramírez Muñoz 2009

机译：基于巨磁阻（GMR）技术的磁场传感器：在电流感应中的应用
7. Universal Scaling of Ballistic Magnetoresistance in Magnetic Nanocontacts [O] . Chung, S. H., Munoz, M., Garcıa, N., 2002

机译：磁性纳米接触中弹道磁阻的通用尺度

BALLISTIC MAGNETORESISTANCE FOR MAGNETIC, CHEMICAL SENSING

摘要

著录项

相似文献

相关主题

期刊订阅