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首页> 外文会议>Conference on Nanoparticles 2004: Nanoelectronics, Nanophotonics, and Nanomagnetics vol.7; 20041025-26; Stamford,CT(US) >CHEMICAL MECHANICAL POLISHING (CMP) AND MATERIALS FOR CMP—AN INDUSTRY/MARKET OVERVIEW AND FUTURE OUTLOOK
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CHEMICAL MECHANICAL POLISHING (CMP) AND MATERIALS FOR CMP—AN INDUSTRY/MARKET OVERVIEW AND FUTURE OUTLOOK

机译：CMP的化学机械抛光（CMP）和材料-工业/市场概述和未来展望

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摘要

Polishing and planarization are related in that polishing improves the flatness (planarity), smoothness and optical properties of a surface. Planarization, however, is a much more critical process. Integrated circuit (IC) manufacturers must planarize each surface layer of an in-process wafer to make it level for the next application of microlithography.rnChemical mechanical planarization (CMP) is used during the semiconductor manufacturing process to planarize individual layers in complex integrated circuits to customer-specific parameters. CMP is a critical technology in the planarization of multilevel metallization systems and in shallow trench isolations (STIs) in semiconductor manufacturing. The rapid emergence of copper and low-k dielectrics as interconnect structures for integrated circuits has further pushed CMP technology to the forefront of semiconductor manufacturing.
机译：抛光和平面化的关系在于抛光改善了表面的平坦度（平面度），光滑度和光学性能。但是，平面化是一个更为关键的过程。集成电路（IC）制造商必须将加工中的晶圆的每个表面层平坦化，以使其平整，以备下次光刻应用。在半导体制造过程中，使用化学机械平坦化（CMP）来平坦化复杂集成电路中的各个层，以达到客户特定的参数。 CMP是多层金属化系统的平面化和半导体制造中浅沟槽隔离（STI）的一项关键技术。铜和低k电介质作为集成电路的互连结构的迅速出现进一步将CMP技术推到了半导体制造的最前沿。

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