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首页> 外文会议>Conference on Noise as a Tool for Studying Materials Jun 2-4, 2003 Santa Fe, New Mexico, USA >Investigation of Electromigration in Copper Interconnects by Noise Measurements
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Investigation of Electromigration in Copper Interconnects by Noise Measurements

机译：通过噪声测量研究铜互连中的电迁移

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摘要

Electromigration in sub-micron conductors of Cu and CuAl was studied by 1/f noise measurements for the first time. 1/f noise can serve as a very sensitive indicator for electromigration damage: The 1/f noise level is increased by up to two orders of magnitude whereas the resistance of the damaged interconnects is enhanced by less than a factor of two only. The most striking advantage of the 1/f noise measurement technique compared to the methods frequently used at present for electromigration studies (e.g., the 'Median Time of Failure, MTF' technique) is that it is possible to determine the distribution of the activation energies of the processes involved from a single sample at progressive electromigration damaging. In Cu interconnects a strong increase in the number of mobile defects is observed during electromigration damaging whereas the shape of the distribution of the activation energies (maximum between 0.8 and 0.95 eV) does not change much, except shortly before the failure of the interconnect lines where a shift to higher activation energies (maximum: 1.05 eV) is measured. Significantly higher activation energies observed in undamaged and electromigration damaged CuAl_(0.5wt%) interconnects indicate an advanced resistance of CuAl alloys to electromigration when compared to pure Cu lines.
机译：首次通过1 / f噪声测量研究了Cu和CuAl的亚微米导体中的电迁移。 1 / f噪声可以作为电迁移损坏的非常敏感的指标：1 / f噪声水平最多增加两个数量级，而损坏的互连的电阻仅增加不到两倍。与目前电迁移研究中常用的方法（例如，“中值失效时间，MTF”技术）相比，1 / f噪声测量技术最显着的优势在于可以确定活化能的分布逐步电迁移破坏中单个样品所涉及的过程在铜互连中，在电迁移破坏期间观察到可移动缺陷的数量急剧增加，而激活能的分布形状（最大值在0.8到0.95 eV之间）没有太大变化，除非互连线在失效之前不久。测量到向更高的活化能（最大：1.05 eV）转移。与纯Cu线相比，在未损坏和电迁移损坏的CuAl_（0.5wt％）互连中观察到的活化能明显更高，表明CuAl合金对电迁移具有更高的抵抗力。

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