首页> 外文会议>Conference on Optical Components and Materials; 20080121-23; San Jose,CA(US) >304 mW green light emission by frequency doubling of a high-power 1060-nm DBR semiconductor laser diode
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304 mW green light emission by frequency doubling of a high-power 1060-nm DBR semiconductor laser diode

机译:大功率1060nm DBR半导体激光二极管的倍频,可产生304 mW的绿色光

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摘要

We report for the first time, to the best of our knowledge, 304 mW green light emission generated by frequency doubling of the output from a 1060-nm DBR semiconductor laser using a periodically poled MgO-doped lithium niobate waveguide in a compact single-pass configuration. The excellent performance of these DBR lasers, including a kink-free power greater than 750 mW, single-spatial-mode output beam, single-wavelength emission spectra, and high wavelength-tuning efficiency, plays an important role in the generation of high-power green light.
机译:据我们所知,这是首次报告,通过使用周期性极化掺杂MgO的铌酸锂波导以紧凑的单程方式将1060 nm DBR半导体激光器的输出倍频,产生304 mW绿光。组态。这些DBR激光器的出色性能,包括大于750 mW的无扭结功率,单空间模式输出光束,单波长发射光谱和高波长调谐效率,在产生高波长激光方面起着重要作用。电源绿灯。

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