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首页> 外文会议>Conference on Optical Microlithography XVII pt.2; 20040224-20040227; Santa Clara,CA; US >Matching OPC and masks on 300mm lithography tools utilizing variable illumination settings
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Matching OPC and masks on 300mm lithography tools utilizing variable illumination settings

机译：利用可变的照明设置在300mm光刻工具上匹配OPC和掩模

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摘要

CD control is crucial to maximize product yields on 300mm wafers. This is particularly true for DRAM frontend lithography layers, like gate level, and deep trench (capacitor) level. In the DRAM process, large areas of the chip are taken up by array structures, which are difficult to structure due to aggressive pitch requirements. Consequently, the lithography process is centered such that the array structures are printed on target. Optical proximity correction is applied to print gate level structures in the periphery circuitry on target. Only slight differences of the different Zemike terms can cause rather large variations of the proximity curves, resulting in a difference of isolated and semi-isolated lines printed on different tools. If the deviations are too large, tool specific OPC is needed. The same is true for deep trench level, where the length to width ratio of elongated contact-like structures is an important parameter to adjust the electrical properties of the chip. Again, masks with tool specific biases for tools with different Zernikes are needed to optimize product yield. Additionally, mask making contributes to the CD variation of the process. Theoretically, the CD deviation caused by an off-centered mask process can easily eat up the majority of the CD budget of a lithography process. In practice, masks are very often distributed intelligently among production tools, such that lens and mask effects cancel each other. However, only dose adjusting and mask allocation may still result in a high CD variation with large systematical contributions. By adjusting the illumination settings, we have successfully implemented a method to reduce CD variation on our advanced processes. Especially inner and outer sigma for annular illumination, and the numerical aperture, can be optimized to match mask and stepper properties. This process will be shown to overcome slight lens and mask differences effectively. The effects on lithography process windows have to be considered, nonetheless.
机译：CD控制对于最大化300mm晶圆的产品产量至关重要。对于DRAM前端光刻层（如栅极层和深沟槽（电容器）层）尤其如此。在DRAM工艺中，芯片的大面积被阵列结构占用，由于节距要求高而难以结构化。因此，光刻工艺居中，从而将阵列结构印刷在目标上。将光学邻近校正应用于目标上外围电路中的打印门电平结构。不同Zemike项的细微差别会导致接近曲线发生较大变化，从而导致在不同工具上打印的隔离线和半隔离线有所不同。如果偏差太大，则需要特定于工具的OPC。对于深沟槽水平也是如此，其中细长的接触状结构的长宽比是调节芯片电性能的重要参数。同样，对于具有不同Zernike的工具，需要使用具有工具特定偏差的蒙版，以优化产品产量。另外，掩膜制作有助于该过程的CD变化。从理论上讲，由偏心的掩模工艺引起的CD偏差很容易耗尽光刻工艺的大部分CD预算。实际上，通常在生产工具之间智能地分配蒙版，以使镜头和蒙版效果相互抵消。然而，仅剂量调整和掩模分配仍可能导致高CD变化，并具有较大的系统贡献。通过调整照明设置，我们成功地实现了一种减少先进工艺中CD变化的方法。尤其可以优化用于环形照明的内和外西格玛以及数值孔径，以匹配掩模和步进器的特性。将显示此过程可有效克服轻微的镜头和蒙版差异。尽管如此，仍必须考虑对光刻工艺窗口的影响。

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