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首页> 外文会议>Conference on Photon Processing in Microelectronics and Photonics III; 20040126-20040129; San Jose,CA; US >Modification of the structure of thin metal films on lithium niobate by ion implantation
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Modification of the structure of thin metal films on lithium niobate by ion implantation

机译：离子注入对铌酸锂上金属薄膜结构的改性

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摘要

The method of modification of the surface structure of the systems thin metal film - thick lithium niobate substrate is proposed. The ion implantation as a part of the technology process must be carried out by Ar+ ions with optimal energies and dozes. Depending of the firm material, structure changes may be different: from little bubbles for Ni film to large craters and holes in the system for Pd film. The surface structure of such systems was researched by electron microscopy and Atomic Force Microscopy. The X-ray investigations of implanted systems are earned out too. The distinctions in the structure of implanted and nonimplanted systems are found. The theoretical calculations of profiles of braking recoil atoms are carried out by Monte-Carlo method for the energies of Ar+ ions of 50, 100 and 150 keV. It is found that the greatest degree of an amorphyzation in such systems is observed on depth conforming to a maximum of distribution of recoil atoms. It is shown that the considerable changes of the structure of the researched systems do not result in sufficient changes of optical properties of these systems owing to an implantation. The implanted systems thin metal film - thick lithium niobate substrate is proposed for effective using in modern opto-electronic devices with improved optical characteristics.
机译：提出了系统薄金属膜-厚铌酸锂基体表面结构的改性方法。作为工艺过程的一部分，离子注入必须由具有最佳能量和剂量的Ar +离子进行。取决于坚固的材料，结构变化可能会有所不同：从用于Ni膜的小气泡到用于Pd膜的系统中的大凹坑和孔。通过电子显微镜和原子力显微镜研究了这种系统的表面结构。也可以进行植入系统的X射线检查。发现了植入系统和非植入系统的结构差异。对于50、100和150 keV的Ar +离子能量，通过蒙特卡洛方法对制动后坐原子的轮廓进行了理论计算。发现在这样的系统中，最大程度的非晶化程度是在符合反冲原子分布最大值的深度上观察到的。结果表明，由于植入，所研究系统的结构的显着变化不会导致这些系统的光学性质发生足够的变化。为了有效地用于具有改进的光学特性的现代光电装置，提出了植入系统的金属薄膜-厚铌酸锂衬底。

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